1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS.

Thomas L Koch, L. A. Coldren, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, D. P. Wilt

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate a new low-threshold 1. 5 mu m single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 db have been achieved with typical thresholds of 35 ma.

Original languageEnglish (US)
Pages (from-to)1001-1002
Number of pages2
JournalElectronics Letters
Volume20
Issue number24
StatePublished - Jan 1 1984
Externally publishedYes

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Heterojunctions
Vapors
Wavelength
Lasers
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Koch, T. L., Coldren, L. A., Bridges, T. J., Burkhardt, E. G., Corvini, P. J., & Wilt, D. P. (1984). 1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS. Electronics Letters, 20(24), 1001-1002.

1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS. / Koch, Thomas L; Coldren, L. A.; Bridges, T. J.; Burkhardt, E. G.; Corvini, P. J.; Wilt, D. P.

In: Electronics Letters, Vol. 20, No. 24, 01.01.1984, p. 1001-1002.

Research output: Contribution to journalArticle

Koch, TL, Coldren, LA, Bridges, TJ, Burkhardt, EG, Corvini, PJ & Wilt, DP 1984, '1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS.', Electronics Letters, vol. 20, no. 24, pp. 1001-1002.
Koch TL, Coldren LA, Bridges TJ, Burkhardt EG, Corvini PJ, Wilt DP. 1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS. Electronics Letters. 1984 Jan 1;20(24):1001-1002.
Koch, Thomas L ; Coldren, L. A. ; Bridges, T. J. ; Burkhardt, E. G. ; Corvini, P. J. ; Wilt, D. P. / 1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS. In: Electronics Letters. 1984 ; Vol. 20, No. 24. pp. 1001-1002.
@article{612a8673b9d6476f953c9f4a6f8989e8,
title = "1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS.",
abstract = "We demonstrate a new low-threshold 1. 5 mu m single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 db have been achieved with typical thresholds of 35 ma.",
author = "Koch, {Thomas L} and Coldren, {L. A.} and Bridges, {T. J.} and Burkhardt, {E. G.} and Corvini, {P. J.} and Wilt, {D. P.}",
year = "1984",
month = "1",
day = "1",
language = "English (US)",
volume = "20",
pages = "1001--1002",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "24",

}

TY - JOUR

T1 - 1. 5 mu m MONOLITHIC SHALLOW-GROOVE COUPLED-CAVITY VAPOUR PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS.

AU - Koch, Thomas L

AU - Coldren, L. A.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Corvini, P. J.

AU - Wilt, D. P.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - We demonstrate a new low-threshold 1. 5 mu m single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 db have been achieved with typical thresholds of 35 ma.

AB - We demonstrate a new low-threshold 1. 5 mu m single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 db have been achieved with typical thresholds of 35 ma.

UR - http://www.scopus.com/inward/record.url?scp=0021519715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021519715&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021519715

VL - 20

SP - 1001

EP - 1002

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 24

ER -