10T and 8T Full Adders Based on Ambipolar XOR Gates with SB-FinFETs

Talha Furkan Canan, Savas Kaya, Avinash Kodi, Hao Xin, Ahmed Louri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We introduce novel ten (10T) and eight (8T) transistor full-adder logic gates based on recently proposed gate workfunction engineering (WFE) approach. When applied to sub-10 nm Schottky-barrier (SB) independent-gate FinFETs, WFE leads to hitherto unexplored 4T and 3T XOR implementations that operate with either only one or no inverted input, respectively. The novel 4T and 3T XOR gates eliminate the need for inverted inputs provided that ambipolar I-V characteristics is shifted by the associated gate work-function in the right direction, where another conduction channel exists. Following the logic verification of the novel 4T and 3T XOR gates via TCAD simulations, we then continue to show how these novel gates can be put to use in building ultra-compact 10T and 8T full-adder circuits, which would normally require up to 20 FinFETs in conventional CMOS architecture. Simulated power-delay products of the novel full-adders show significant (∼5×) improvement in dynamic performance attributed largely to the 50% reduction in total area as well as parasitics, at the expense of loss in noise margins. Besides the full-adders explored, the presented WFE approach could in general provide area and performance gains also for other logic building blocks that can be redesigned using SB-FinFETs.

Original languageEnglish (US)
Title of host publication2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages577-580
Number of pages4
ISBN (Electronic)9781538695623
DOIs
StatePublished - Jan 17 2019
Event25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 - Bordeaux, France
Duration: Dec 9 2018Dec 12 2018

Publication series

Name2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018

Conference

Conference25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018
CountryFrance
CityBordeaux
Period12/9/1812/12/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

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    Canan, T. F., Kaya, S., Kodi, A., Xin, H., & Louri, A. (2019). 10T and 8T Full Adders Based on Ambipolar XOR Gates with SB-FinFETs. In 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 (pp. 577-580). [8617893] (2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.2018.8617893