1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, Stephan W Koch, Jorg Hader, Jerome V Moloney, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) VI
PublisherSPIE
Volume9734
ISBN (Electronic)9781628419696
DOIs
StatePublished - 2016
Externally publishedYes
EventVertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States
Duration: Feb 15 2016Feb 16 2016

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) VI
CountryUnited States
CitySan Francisco
Period2/15/162/16/16

Keywords

  • semiconductor disk laser
  • type-II quantum well
  • VECSEL
  • Vertical-external-cavity surface-emitting laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Applied Mathematics

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  • Cite this

    Möller, C., Berger, C., Fuchs, C., Ruiz Perez, A., Koch, S. W., Hader, J., Moloney, J. V., & Stolz, W. (2016). 1.2μm emitting VECSEL based on type-II aligned QWs. In Vertical External Cavity Surface Emitting Lasers (VECSELs) VI (Vol. 9734). [97340H] SPIE. https://doi.org/10.1117/12.2212438