1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, Stephan W Koch, Jorg Hader, Jerome V Moloney, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) VI
PublisherSPIE
Volume9734
ISBN (Electronic)9781628419696
DOIs
StatePublished - 2016
Externally publishedYes
EventVertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States
Duration: Feb 15 2016Feb 16 2016

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) VI
CountryUnited States
CitySan Francisco
Period2/15/162/16/16

Fingerprint

inventions
Semiconductor Lasers
Patents and inventions
Semiconductor lasers
Coverage
Infrared
Defects
semiconductor lasers
Wavelength
Laser
Infrared radiation
Lasers
Alternatives
defects
wavelengths
Range of data
lasers

Keywords

  • semiconductor disk laser
  • type-II quantum well
  • VECSEL
  • Vertical-external-cavity surface-emitting laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

Möller, C., Berger, C., Fuchs, C., Ruiz Perez, A., Koch, S. W., Hader, J., ... Stolz, W. (2016). 1.2μm emitting VECSEL based on type-II aligned QWs. In Vertical External Cavity Surface Emitting Lasers (VECSELs) VI (Vol. 9734). [97340H] SPIE. https://doi.org/10.1117/12.2212438

1.2μm emitting VECSEL based on type-II aligned QWs. / Möller, C.; Berger, C.; Fuchs, C.; Ruiz Perez, A.; Koch, Stephan W; Hader, Jorg; Moloney, Jerome V; Stolz, W.

Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016. 97340H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Möller, C, Berger, C, Fuchs, C, Ruiz Perez, A, Koch, SW, Hader, J, Moloney, JV & Stolz, W 2016, 1.2μm emitting VECSEL based on type-II aligned QWs. in Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. vol. 9734, 97340H, SPIE, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, San Francisco, United States, 2/15/16. https://doi.org/10.1117/12.2212438
Möller C, Berger C, Fuchs C, Ruiz Perez A, Koch SW, Hader J et al. 1.2μm emitting VECSEL based on type-II aligned QWs. In Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734. SPIE. 2016. 97340H https://doi.org/10.1117/12.2212438
Möller, C. ; Berger, C. ; Fuchs, C. ; Ruiz Perez, A. ; Koch, Stephan W ; Hader, Jorg ; Moloney, Jerome V ; Stolz, W. / 1.2μm emitting VECSEL based on type-II aligned QWs. Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016.
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