1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller; C. Berger; C. Fuchs; A. Ruiz Perez; Stephan W Koch; Jorg Hader; Jerome V Moloney; W. Stolz

doi:10.1117/12.2212438

1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, Stephan W Koch, Jorg Hader, Jerome V Moloney, W. Stolz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

Original language	English (US)
Title of host publication	Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
Publisher	SPIE
Volume	9734
ISBN (Electronic)	9781628419696
DOIs	https://doi.org/10.1117/12.2212438
State	Published - 2016
Externally published	Yes
Event	Vertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States Duration: Feb 15 2016 → Feb 16 2016

Other

Other	Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
Country	United States
City	San Francisco
Period	2/15/16 → 2/16/16

Keywords

semiconductor disk laser
type-II quantum well
VECSEL
Vertical-external-cavity surface-emitting laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Electrical and Electronic Engineering
Applied Mathematics

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Möller, C, Berger, C, Fuchs, C, Ruiz Perez, A, Koch, SW , Hader, J , Moloney, JV & Stolz, W 2016, 1.2μm emitting VECSEL based on type-II aligned QWs. in Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. vol. 9734, 97340H, SPIE, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, San Francisco, United States, 2/15/16. https://doi.org/10.1117/12.2212438

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title = "1.2μm emitting VECSEL based on type-II aligned QWs",

abstract = "Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.",

keywords = "semiconductor disk laser, type-II quantum well, VECSEL, Vertical-external-cavity surface-emitting laser",

author = "C. M{\"o}ller and C. Berger and C. Fuchs and {Ruiz Perez}, A. and Koch, {Stephan W} and Jorg Hader and Moloney, {Jerome V} and W. Stolz",

year = "2016",

doi = "10.1117/12.2212438",

language = "English (US)",

volume = "9734",

booktitle = "Vertical External Cavity Surface Emitting Lasers (VECSELs) VI",

publisher = "SPIE",

address = "United States",

note = "Vertical External Cavity Surface Emitting Lasers (VECSELs) VI ; Conference date: 15-02-2016 Through 16-02-2016",

}

TY - GEN

T1 - 1.2μm emitting VECSEL based on type-II aligned QWs

AU - Möller, C.

AU - Berger, C.

AU - Fuchs, C.

AU - Ruiz Perez, A.

AU - Koch, Stephan W

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Stolz, W.

PY - 2016

Y1 - 2016

N2 - Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

AB - Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

KW - semiconductor disk laser

KW - type-II quantum well

KW - VECSEL

KW - Vertical-external-cavity surface-emitting laser

UR - http://www.scopus.com/inward/record.url?scp=84981287334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981287334&partnerID=8YFLogxK

U2 - 10.1117/12.2212438

DO - 10.1117/12.2212438

M3 - Conference contribution

AN - SCOPUS:84981287334

VL - 9734

BT - Vertical External Cavity Surface Emitting Lasers (VECSELs) VI

PB - SPIE

T2 - Vertical External Cavity Surface Emitting Lasers (VECSELs) VI

Y2 - 15 February 2016 through 16 February 2016

ER -

1.2μm emitting VECSEL based on type-II aligned QWs

Abstract

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Keywords

ASJC Scopus subject areas

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