Abstract
Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.
Original language | English (US) |
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Title of host publication | Vertical External Cavity Surface Emitting Lasers (VECSELs) VI |
Publisher | SPIE |
Volume | 9734 |
ISBN (Electronic) | 9781628419696 |
DOIs | |
State | Published - 2016 |
Externally published | Yes |
Event | Vertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States Duration: Feb 15 2016 → Feb 16 2016 |
Other
Other | Vertical External Cavity Surface Emitting Lasers (VECSELs) VI |
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Country | United States |
City | San Francisco |
Period | 2/15/16 → 2/16/16 |
Keywords
- semiconductor disk laser
- type-II quantum well
- VECSEL
- Vertical-external-cavity surface-emitting laser
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Electrical and Electronic Engineering
- Applied Mathematics