1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

T. L. Koch, L. A. Coldren, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, D. P. Wilt

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.

Original languageEnglish (US)
Pages (from-to)1001-1002
Number of pages2
JournalElectronics Letters
Volume20
Issue number24
DOIs
StatePublished - Nov 22 1984
Externally publishedYes

Keywords

  • Lasers and laser applications
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Koch, T. L., Coldren, L. A., Bridges, T. J., Burkhardt, E. G., Corvini, P. J., & Wilt, D. P. (1984). 1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers. Electronics Letters, 20(24), 1001-1002. https://doi.org/10.1049/el:19840681