We demonstrate a new low-threshold 1.5 μm singlewavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.
- Lasers and laser applications
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering