200 MeV proton damage effects on multi-quantum well laser diodes

Y. F. Zhao, A. R. Patwary, R. D. Schrumpf, Mark A Neifeld, K. F. Galloway

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10 -15 cm 2/p for different bias conditions and from 1.52 to 3.58×10- 15 cm 2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I bias=35mA.

Original languageEnglish (US)
Pages (from-to)1898-1905
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume44
Issue number6 PART 1
StatePublished - 1997

Fingerprint

proton damage
Quantum well lasers
quantum well lasers
Semiconductor lasers
Protons
semiconductor lasers
Annealing
threshold currents
Semiconductor quantum wells
damage
annealing
Irradiation
Degradation
quantum wells
degradation
irradiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Zhao, Y. F., Patwary, A. R., Schrumpf, R. D., Neifeld, M. A., & Galloway, K. F. (1997). 200 MeV proton damage effects on multi-quantum well laser diodes. IEEE Transactions on Nuclear Science, 44(6 PART 1), 1898-1905.

200 MeV proton damage effects on multi-quantum well laser diodes. / Zhao, Y. F.; Patwary, A. R.; Schrumpf, R. D.; Neifeld, Mark A; Galloway, K. F.

In: IEEE Transactions on Nuclear Science, Vol. 44, No. 6 PART 1, 1997, p. 1898-1905.

Research output: Contribution to journalArticle

Zhao, YF, Patwary, AR, Schrumpf, RD, Neifeld, MA & Galloway, KF 1997, '200 MeV proton damage effects on multi-quantum well laser diodes', IEEE Transactions on Nuclear Science, vol. 44, no. 6 PART 1, pp. 1898-1905.
Zhao YF, Patwary AR, Schrumpf RD, Neifeld MA, Galloway KF. 200 MeV proton damage effects on multi-quantum well laser diodes. IEEE Transactions on Nuclear Science. 1997;44(6 PART 1):1898-1905.
Zhao, Y. F. ; Patwary, A. R. ; Schrumpf, R. D. ; Neifeld, Mark A ; Galloway, K. F. / 200 MeV proton damage effects on multi-quantum well laser diodes. In: IEEE Transactions on Nuclear Science. 1997 ; Vol. 44, No. 6 PART 1. pp. 1898-1905.
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