200 MeV proton damage effects on multi-quantum well laser diodes

Y. F. Zhao; A. R. Patwary; R. D. Schrumpf; M. A. Neifeld; K. F. Galloway

doi:10.1109/23.658959

200 MeV proton damage effects on multi-quantum well laser diodes

Y. F. Zhao, A. R. Patwary, R. D. Schrumpf, M. A. Neifeld, K. F. Galloway

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10^-15 cm²/p for different bias conditions and from 1.52 to 3.58×10-¹⁵ cm²/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I_bias=35mA.

Original language	English (US)
Pages (from-to)	1898-1905
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	44
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.658959
State	Published - 1997

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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AU - Patwary, A. R.

AU - Schrumpf, R. D.

AU - Neifeld, M. A.

AU - Galloway, K. F.

PY - 1997

Y1 - 1997

N2 - 200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35mA.

AB - 200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35mA.

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200 MeV proton damage effects on multi-quantum well laser diodes

Abstract

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