Abstract
200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10 -15 cm 2/p for different bias conditions and from 1.52 to 3.58×10- 15 cm 2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I bias=35mA.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1898-1905 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 44 |
| Issue number | 6 PART 1 |
| State | Published - 1997 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering
Cite this
200 MeV proton damage effects on multi-quantum well laser diodes. / Zhao, Y. F.; Patwary, A. R.; Schrumpf, R. D.; Neifeld, Mark A; Galloway, K. F.
In: IEEE Transactions on Nuclear Science, Vol. 44, No. 6 PART 1, 1997, p. 1898-1905.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 200 MeV proton damage effects on multi-quantum well laser diodes
AU - Zhao, Y. F.
AU - Patwary, A. R.
AU - Schrumpf, R. D.
AU - Neifeld, Mark A
AU - Galloway, K. F.
PY - 1997
Y1 - 1997
N2 - 200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10 -15 cm 2/p for different bias conditions and from 1.52 to 3.58×10- 15 cm 2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I bias=35mA.
AB - 200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10 -15 cm 2/p for different bias conditions and from 1.52 to 3.58×10- 15 cm 2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I bias=35mA.
UR - http://www.scopus.com/inward/record.url?scp=0031386894&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031386894&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031386894
VL - 44
SP - 1898
EP - 1905
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6 PART 1
ER -