200 MeV proton damage effects on multi-quantum well laser diodes

Y. F. Zhao; A. R. Patwary; R. D. Schrumpf; M. A. Neifeld; K. F. Galloway

doi:10.1109/23.658959

200 MeV proton damage effects on multi-quantum well laser diodes

Y. F. Zhao, A. R. Patwary, R. D. Schrumpf, M. A. Neifeld, K. F. Galloway

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10^-15 cm²/p for different bias conditions and from 1.52 to 3.58×10-¹⁵ cm²/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I_bias=35mA.

Original language	English (US)
Pages (from-to)	1898-1905
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	44
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.658959
State	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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@article{e3a2369a73a74d22baa5981702a0a606,

title = "200 MeV proton damage effects on multi-quantum well laser diodes",

abstract = "200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35mA.",

author = "Zhao, {Y. F.} and Patwary, {A. R.} and Schrumpf, {R. D.} and Neifeld, {M. A.} and Galloway, {K. F.}",

year = "1997",

doi = "10.1109/23.658959",

language = "English (US)",

volume = "44",

pages = "1898--1905",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 PART 1",

}

TY - JOUR

T1 - 200 MeV proton damage effects on multi-quantum well laser diodes

AU - Zhao, Y. F.

AU - Patwary, A. R.

AU - Schrumpf, R. D.

AU - Neifeld, M. A.

AU - Galloway, K. F.

PY - 1997

Y1 - 1997

N2 - 200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35mA.

AB - 200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35mA.

UR - http://www.scopus.com/inward/record.url?scp=0031386894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031386894&partnerID=8YFLogxK

U2 - 10.1109/23.658959

DO - 10.1109/23.658959

M3 - Article

AN - SCOPUS:0031386894

VL - 44

SP - 1898

EP - 1905

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6 PART 1

ER -

200 MeV proton damage effects on multi-quantum well laser diodes

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