Abstract
200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35mA.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1898-1905 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 44 |
| Issue number | 6 PART 1 |
| DOIs | |
| State | Published - 1997 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
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Zhao, Y. F., Patwary, A. R., Schrumpf, R. D., Neifeld, M. A., & Galloway, K. F. (1997). 200 MeV proton damage effects on multi-quantum well laser diodes. IEEE Transactions on Nuclear Science, 44(6 PART 1), 1898-1905. https://doi.org/10.1109/23.658959