200 MeV proton damage effects on multi-quantum well laser diodes

Y. F. Zhao, A. R. Patwary, R. D. Schrumpf, M. A. Neifeld, K. F. Galloway

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

200 MeV proton damage effects on multi-quantum well GaAs/GaAIAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10 -15 cm 2/p for different bias conditions and from 1.52 to 3.58×10- 15 cm 2/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at I bias=35mA.

Original languageEnglish (US)
Pages (from-to)1898-1905
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume44
Issue number6 PART 1
StatePublished - Dec 1 1997

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Zhao, Y. F., Patwary, A. R., Schrumpf, R. D., Neifeld, M. A., & Galloway, K. F. (1997). 200 MeV proton damage effects on multi-quantum well laser diodes. IEEE Transactions on Nuclear Science, 44(6 PART 1), 1898-1905.