340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs

Yi Ying Lai, J. M. Yarborough, Yushi Kaneda, Jörg Hader, Jerome V. Moloney, T. J. Rotter, G. Balakrishnan, C. Hains, S. W. Koch

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd:YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.

Original languageEnglish (US)
Article number5512584
Pages (from-to)1253-1255
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number16
DOIs
StatePublished - Aug 6 2010

Keywords

  • Gallium arsenide
  • laser cavity resonators
  • optical pumping
  • semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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