Abstract
A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd:YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.
| Original language | English (US) |
|---|---|
| Article number | 5512584 |
| Pages (from-to) | 1253-1255 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 22 |
| Issue number | 16 |
| DOIs | |
| State | Published - Aug 6 2010 |
Keywords
- Gallium arsenide
- laser cavity resonators
- optical pumping
- semiconductor lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Cite this
Lai, Y. Y., Yarborough, J. M., Kaneda, Y., Hader, J., Moloney, J. V., Rotter, T. J., Balakrishnan, G., Hains, C., & Koch, S. W. (2010). 340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs. IEEE Photonics Technology Letters, 22(16), 1253-1255. [5512584]. https://doi.org/10.1109/LPT.2010.2052596