340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs

Yi Ying Lai; J. M. Yarborough; Yushi Kaneda; Jörg Hader; Jerome V. Moloney; T. J. Rotter; G. Balakrishnan; C. Hains; S. W. Koch

doi:10.1109/LPT.2010.2052596

340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs

Yi Ying Lai, J. M. Yarborough, Yushi Kaneda, Jörg Hader, Jerome V. Moloney, T. J. Rotter, G. Balakrishnan, C. Hains, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd:YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.

Original language	English (US)
Article number	5512584
Pages (from-to)	1253-1255
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2010.2052596
State	Published - Aug 6 2010

Keywords

Gallium arsenide
laser cavity resonators
optical pumping
semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs. / Lai, Yi Ying; Yarborough, J. M.; Kaneda, Yushi ; Hader, Jörg ; Moloney, Jerome V.; Rotter, T. J.; Balakrishnan, G.; Hains, C.; Koch, S. W.

In: IEEE Photonics Technology Letters, Vol. 22, No. 16, 5512584, 06.08.2010, p. 1253-1255.

Research output: Contribution to journal › Article › peer-review

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AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Rotter, T. J.

AU - Balakrishnan, G.

AU - Hains, C.

AU - Koch, S. W.

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KW - optical pumping

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