Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Dec 1 1985|
ASJC Scopus subject areas