8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.

J. E. Bowers, Thomas L Koch, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, D. P. Wilt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherIEEE
Pages88-90
Number of pages3
StatePublished - 1985
Externally publishedYes

Fingerprint

Vapors
Lasers
Liquid phase epitaxy
Wet etching
Reactive ion etching
Polyimides
Heterojunctions
Waveguides
Capacitance
Modulation
Bandwidth

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bowers, J. E., Koch, T. L., Hemenway, B. R., Bridges, T. J., Burkhardt, E. G., & Wilt, D. P. (1985). 8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS. In Unknown Host Publication Title (pp. 88-90). IEEE.

8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS. / Bowers, J. E.; Koch, Thomas L; Hemenway, B. R.; Bridges, T. J.; Burkhardt, E. G.; Wilt, D. P.

Unknown Host Publication Title. IEEE, 1985. p. 88-90.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bowers, JE, Koch, TL, Hemenway, BR, Bridges, TJ, Burkhardt, EG & Wilt, DP 1985, 8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS. in Unknown Host Publication Title. IEEE, pp. 88-90.
Bowers JE, Koch TL, Hemenway BR, Bridges TJ, Burkhardt EG, Wilt DP. 8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS. In Unknown Host Publication Title. IEEE. 1985. p. 88-90
Bowers, J. E. ; Koch, Thomas L ; Hemenway, B. R. ; Bridges, T. J. ; Burkhardt, E. G. ; Wilt, D. P. / 8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS. Unknown Host Publication Title. IEEE, 1985. pp. 88-90
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AU - Koch, Thomas L

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AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Wilt, D. P.

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N2 - Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

AB - Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

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