8-GHZ BANDWIDTH 1. 52- mu M VAPOR PHASE TRANSPORTED INGAASP LASERS.

J. E. Bowers, T. L. Koch, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, D. P. Wilt

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

Summary form only given. Modifications and results are described on vapor phase transported InGaAsP lasers which increase the small-signal modulation bandwidth from previous typical values of 3 GHz to as high as 8 GHz. An InGaAsP double-heterostructure wafer grown by liquid phase epitaxy is etched with a combination of reactive ion etching and wet chemical etching to form a mushroom-shaped structure with an active layer width of 1. 5 mu m. The transverse waveguide is formed by a vapor phase epitaxial (VPE) regrowth of a low-doped InP layer. The three major modifications described are (1) an order of magnitude reduction in the area of the bonding pad, (2) a 1- mu m thick layer of polyimide under the bonding pad to further reduce the capacitance, and (3) a reduction in the InP regrowth to limit the area of the p-n junction in the VPE InP region.

Original languageEnglish (US)
Pages88-90
Number of pages3
StatePublished - Dec 1 1985
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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