A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second

Cuong Vo Le, T. Goji Etoh, H. D. Nguyen, V. T.S. Dao, H. Soya, Michael Lesser, David Ouellette, H. van Kuijk, J. Bosiers, G. Ingram

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.

Original languageEnglish (US)
Pages (from-to)2556-2562
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number11
DOIs
StatePublished - Sep 29 2009

Keywords

  • Charge-carrier multiplication (CCM)
  • High sensitivity
  • High speed
  • In situ storage image sensor (ISIS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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