A comparative electrochemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids

G. Li, E. A. Kneer, B. Vermeire, H. G. Parks, Srini Raghavan, Joong S. Jeon

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

An electrochemical direct current polarization method was used to investigate characteristics of copper deposition onto silicon from dilute and buffered hydrofluoric acid solutions. The corrosion current density and corrosion potential of silicon were not very sensitive to the Cu2+ concentration, up to 1000 parts per billion, in buffered hydrofluoric acid. However, the extent of copper deposition, as measured by total reflection X-ray fluorescence, increased as the Cu2+ concentration in solution increased. In dilute hydrofluoric acid, Cu2+ addition had a significant and systematic effect on the corrosion potential and corrosion current density of silicon. However, in both types of solution, the cathodic current calculated from the measured copper deposition was found to be only a small fraction of the corrosion current (less than 1%). This indicates that the primary cathodic reaction is not copper ion reduction but hydrogen ion reduction. Illumination affected the electrochemical behavior of both p- and n-type silicon in Cu2+ spiked dilute hydrofluoric acid, but only that of p-type silicon in buffered hydrofluoric acid.

Original languageEnglish (US)
Pages (from-to)241-246
Number of pages6
JournalJournal of the Electrochemical Society
Volume145
Issue number1
StatePublished - Jan 1998

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Hydrofluoric Acid
Hydrofluoric acid
hydrofluoric acid
Silicon
Copper
corrosion
Corrosion
copper
silicon
Current density
current density
Ions
hydrogen ions
Protons
Lighting
direct current
Fluorescence
illumination
Polarization
X rays

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

A comparative electrochemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids. / Li, G.; Kneer, E. A.; Vermeire, B.; Parks, H. G.; Raghavan, Srini; Jeon, Joong S.

In: Journal of the Electrochemical Society, Vol. 145, No. 1, 01.1998, p. 241-246.

Research output: Contribution to journalArticle

Li, G. ; Kneer, E. A. ; Vermeire, B. ; Parks, H. G. ; Raghavan, Srini ; Jeon, Joong S. / A comparative electrochemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids. In: Journal of the Electrochemical Society. 1998 ; Vol. 145, No. 1. pp. 241-246.
@article{90e571743f2f4e1d975b938c2d580e64,
title = "A comparative electrochemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids",
abstract = "An electrochemical direct current polarization method was used to investigate characteristics of copper deposition onto silicon from dilute and buffered hydrofluoric acid solutions. The corrosion current density and corrosion potential of silicon were not very sensitive to the Cu2+ concentration, up to 1000 parts per billion, in buffered hydrofluoric acid. However, the extent of copper deposition, as measured by total reflection X-ray fluorescence, increased as the Cu2+ concentration in solution increased. In dilute hydrofluoric acid, Cu2+ addition had a significant and systematic effect on the corrosion potential and corrosion current density of silicon. However, in both types of solution, the cathodic current calculated from the measured copper deposition was found to be only a small fraction of the corrosion current (less than 1{\%}). This indicates that the primary cathodic reaction is not copper ion reduction but hydrogen ion reduction. Illumination affected the electrochemical behavior of both p- and n-type silicon in Cu2+ spiked dilute hydrofluoric acid, but only that of p-type silicon in buffered hydrofluoric acid.",
author = "G. Li and Kneer, {E. A.} and B. Vermeire and Parks, {H. G.} and Srini Raghavan and Jeon, {Joong S.}",
year = "1998",
month = "1",
language = "English (US)",
volume = "145",
pages = "241--246",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

TY - JOUR

T1 - A comparative electrochemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids

AU - Li, G.

AU - Kneer, E. A.

AU - Vermeire, B.

AU - Parks, H. G.

AU - Raghavan, Srini

AU - Jeon, Joong S.

PY - 1998/1

Y1 - 1998/1

N2 - An electrochemical direct current polarization method was used to investigate characteristics of copper deposition onto silicon from dilute and buffered hydrofluoric acid solutions. The corrosion current density and corrosion potential of silicon were not very sensitive to the Cu2+ concentration, up to 1000 parts per billion, in buffered hydrofluoric acid. However, the extent of copper deposition, as measured by total reflection X-ray fluorescence, increased as the Cu2+ concentration in solution increased. In dilute hydrofluoric acid, Cu2+ addition had a significant and systematic effect on the corrosion potential and corrosion current density of silicon. However, in both types of solution, the cathodic current calculated from the measured copper deposition was found to be only a small fraction of the corrosion current (less than 1%). This indicates that the primary cathodic reaction is not copper ion reduction but hydrogen ion reduction. Illumination affected the electrochemical behavior of both p- and n-type silicon in Cu2+ spiked dilute hydrofluoric acid, but only that of p-type silicon in buffered hydrofluoric acid.

AB - An electrochemical direct current polarization method was used to investigate characteristics of copper deposition onto silicon from dilute and buffered hydrofluoric acid solutions. The corrosion current density and corrosion potential of silicon were not very sensitive to the Cu2+ concentration, up to 1000 parts per billion, in buffered hydrofluoric acid. However, the extent of copper deposition, as measured by total reflection X-ray fluorescence, increased as the Cu2+ concentration in solution increased. In dilute hydrofluoric acid, Cu2+ addition had a significant and systematic effect on the corrosion potential and corrosion current density of silicon. However, in both types of solution, the cathodic current calculated from the measured copper deposition was found to be only a small fraction of the corrosion current (less than 1%). This indicates that the primary cathodic reaction is not copper ion reduction but hydrogen ion reduction. Illumination affected the electrochemical behavior of both p- and n-type silicon in Cu2+ spiked dilute hydrofluoric acid, but only that of p-type silicon in buffered hydrofluoric acid.

UR - http://www.scopus.com/inward/record.url?scp=0031649090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031649090&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031649090

VL - 145

SP - 241

EP - 246

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -