A comparison of lasing mechanisms in ZnSe and GaAs

I. Galbraith, S. W. Koch

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.

Original languageEnglish (US)
Pages (from-to)667-671
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
StatePublished - Feb 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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