A comparison of lasing mechanisms in ZnSe and GaAs

I. Galbraith, Stephan W Koch

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.

Original languageEnglish (US)
Pages (from-to)667-671
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
StatePublished - Feb 1996
Externally publishedYes

Fingerprint

Stimulated emission
Carrier concentration
lasing
stimulated emission
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

A comparison of lasing mechanisms in ZnSe and GaAs. / Galbraith, I.; Koch, Stephan W.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 667-671.

Research output: Contribution to journalArticle

Galbraith, I. ; Koch, Stephan W. / A comparison of lasing mechanisms in ZnSe and GaAs. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 667-671.
@article{caaf001075954b2a91bd429e494463e8,
title = "A comparison of lasing mechanisms in ZnSe and GaAs",
abstract = "By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.",
author = "I. Galbraith and Koch, {Stephan W}",
year = "1996",
month = "2",
language = "English (US)",
volume = "159",
pages = "667--671",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - A comparison of lasing mechanisms in ZnSe and GaAs

AU - Galbraith, I.

AU - Koch, Stephan W

PY - 1996/2

Y1 - 1996/2

N2 - By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.

AB - By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=0030562421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030562421&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030562421

VL - 159

SP - 667

EP - 671

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -