A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition

F. L. Lie, W. Rachmady, Anthony J Muscat

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Native oxide removal and surface termination of InAs(1 0 0) and InSb(1 0 0) using liquid and gas phase HF chemistries were studied using X-ray photoelectron spectroscopy. Aqueous HF etching removed the native oxides on InAs and produced elemental As, which reoxidized when exposed to air. On InSb the native oxides were not completely removed due to F-termination, which passivated the surface. Gas phase HF etching of InSb native oxide completely removed Sb2O5 producing a stoichiometric semiconductor surface terminated by F atoms on primarily In surface sites. On InAs gas phase HF completely removed As2O3 producing two surface stoichiometries. For the majority of HF to water molar ratios studied, a stoichiometric bulk metal and an As-rich overlayer were produced. For a lean HF composition, an As-rich bulk metal and In-rich overlayer were produced. Deposition of Al2O3 by atomic layer deposition (ALD) at 170 °C directly onto F-terminated InSb produced a chemically sharp Al2O3/InSb interface. ALD of Al2O3 on an In-rich overlayer on InAs resulted in an interfacial layer containing As-oxide.

Original languageEnglish (US)
Pages (from-to)122-127
Number of pages6
JournalMicroelectronic Engineering
Volume86
Issue number2
DOIs
StatePublished - Feb 2009

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Oxides
liquid phases
Gases
vapor phases
preparation
oxides
Liquids
Etching
Metals
etching
Stoichiometry
metals
stoichiometry
X ray photoelectron spectroscopy
III-V semiconductors
photoelectron spectroscopy
chemistry
Semiconductor materials

Keywords

  • AlO
  • Atomic layer deposition
  • Gas phase
  • HF
  • High-k
  • InAs
  • InSb
  • Liquid phase
  • Native oxide removal
  • Surface preparation
  • Water

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition. / Lie, F. L.; Rachmady, W.; Muscat, Anthony J.

In: Microelectronic Engineering, Vol. 86, No. 2, 02.2009, p. 122-127.

Research output: Contribution to journalArticle

@article{a8a764a014e2434aa803ed6d63447de0,
title = "A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition",
abstract = "Native oxide removal and surface termination of InAs(1 0 0) and InSb(1 0 0) using liquid and gas phase HF chemistries were studied using X-ray photoelectron spectroscopy. Aqueous HF etching removed the native oxides on InAs and produced elemental As, which reoxidized when exposed to air. On InSb the native oxides were not completely removed due to F-termination, which passivated the surface. Gas phase HF etching of InSb native oxide completely removed Sb2O5 producing a stoichiometric semiconductor surface terminated by F atoms on primarily In surface sites. On InAs gas phase HF completely removed As2O3 producing two surface stoichiometries. For the majority of HF to water molar ratios studied, a stoichiometric bulk metal and an As-rich overlayer were produced. For a lean HF composition, an As-rich bulk metal and In-rich overlayer were produced. Deposition of Al2O3 by atomic layer deposition (ALD) at 170 °C directly onto F-terminated InSb produced a chemically sharp Al2O3/InSb interface. ALD of Al2O3 on an In-rich overlayer on InAs resulted in an interfacial layer containing As-oxide.",
keywords = "AlO, Atomic layer deposition, Gas phase, HF, High-k, InAs, InSb, Liquid phase, Native oxide removal, Surface preparation, Water",
author = "Lie, {F. L.} and W. Rachmady and Muscat, {Anthony J}",
year = "2009",
month = "2",
doi = "10.1016/j.mee.2008.07.004",
language = "English (US)",
volume = "86",
pages = "122--127",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition

AU - Lie, F. L.

AU - Rachmady, W.

AU - Muscat, Anthony J

PY - 2009/2

Y1 - 2009/2

N2 - Native oxide removal and surface termination of InAs(1 0 0) and InSb(1 0 0) using liquid and gas phase HF chemistries were studied using X-ray photoelectron spectroscopy. Aqueous HF etching removed the native oxides on InAs and produced elemental As, which reoxidized when exposed to air. On InSb the native oxides were not completely removed due to F-termination, which passivated the surface. Gas phase HF etching of InSb native oxide completely removed Sb2O5 producing a stoichiometric semiconductor surface terminated by F atoms on primarily In surface sites. On InAs gas phase HF completely removed As2O3 producing two surface stoichiometries. For the majority of HF to water molar ratios studied, a stoichiometric bulk metal and an As-rich overlayer were produced. For a lean HF composition, an As-rich bulk metal and In-rich overlayer were produced. Deposition of Al2O3 by atomic layer deposition (ALD) at 170 °C directly onto F-terminated InSb produced a chemically sharp Al2O3/InSb interface. ALD of Al2O3 on an In-rich overlayer on InAs resulted in an interfacial layer containing As-oxide.

AB - Native oxide removal and surface termination of InAs(1 0 0) and InSb(1 0 0) using liquid and gas phase HF chemistries were studied using X-ray photoelectron spectroscopy. Aqueous HF etching removed the native oxides on InAs and produced elemental As, which reoxidized when exposed to air. On InSb the native oxides were not completely removed due to F-termination, which passivated the surface. Gas phase HF etching of InSb native oxide completely removed Sb2O5 producing a stoichiometric semiconductor surface terminated by F atoms on primarily In surface sites. On InAs gas phase HF completely removed As2O3 producing two surface stoichiometries. For the majority of HF to water molar ratios studied, a stoichiometric bulk metal and an As-rich overlayer were produced. For a lean HF composition, an As-rich bulk metal and In-rich overlayer were produced. Deposition of Al2O3 by atomic layer deposition (ALD) at 170 °C directly onto F-terminated InSb produced a chemically sharp Al2O3/InSb interface. ALD of Al2O3 on an In-rich overlayer on InAs resulted in an interfacial layer containing As-oxide.

KW - AlO

KW - Atomic layer deposition

KW - Gas phase

KW - HF

KW - High-k

KW - InAs

KW - InSb

KW - Liquid phase

KW - Native oxide removal

KW - Surface preparation

KW - Water

UR - http://www.scopus.com/inward/record.url?scp=58149269179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149269179&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2008.07.004

DO - 10.1016/j.mee.2008.07.004

M3 - Article

AN - SCOPUS:58149269179

VL - 86

SP - 122

EP - 127

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 2

ER -