A high-resolution electron microscopy study of secondary dislocations in Σ = 3, [ī10]—(ī1) grain boundaries of aluminium

M. Shamzuzzoha, P. A. Deymier, D. J. Smith

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Abstract

The atomic structure of secondary dislocations at Σ = 3, [ī10]—(ī1) grain boundaries in pure aluminium have been studied by high-resolution electron microscopy. In defect-free regions, the grain boundary coincident-site lattice is continuous across the interface but several different secondary grain-boundary dislocations are observed in the vicinity of interplanar steps.

Original languageEnglish (US)
Pages (from-to)245-253
Number of pages9
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume64
Issue number1
DOIs
StatePublished - Jul 1991

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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