A high-selectivity native oxide removal process for native oxide free processes

S. Verhaverbeke, M. Iacovacci, P. Mertens, M. Meuris, M. Heyns, R. Schreutelkamp, K. Maex, J. Alay, W. Vandervorst, R. De Blank, M. Kubota, A. Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this work, the removal of native oxide on monocrystalline Si and poly-Si was investigated. It was found that by reducing the concentration of the HF solution, the loss of thermal oxide and TEOS can be reduced almost to thicknesses which are equivalent to the native oxide thickness which has to be removed. To accelerate the reaction, higher temperatures can be used. In the case of poly-Si, it was found that the etching of the last monolayer of the native oxide is much slower than for monocrystalline Si. In the poly-Si case, this can be easily accelerated by the use of higher temperatures.

Original languageEnglish (US)
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages637-640
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - Jan 1 1992
Externally publishedYes
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: Dec 13 1992Dec 16 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period12/13/9212/16/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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