A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors

Qing Hao, Hongbo Zhao, Yue Xiao

Research output: Research - peer-reviewArticle

Abstract

In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For regions away from the transistor, the conventional Fourier's law is used for thermal analysis to minimize the computational load. This hybrid simulation strategy can incorporate the physical phenomena over multiple length scales, including phonon generation by hot electrons in the conduction channel, frequency-dependent phonon transport in the transistor region, and heat transfer across the whole macroscale device.

LanguageEnglish (US)
Article number204501
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
StatePublished - May 28 2017

Fingerprint

high electron mobility transistors
transistors
simulation
electrons
Fourier law
hot electrons
thermal analysis
heat transfer
conduction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors. / Hao, Qing; Zhao, Hongbo; Xiao, Yue.

In: Journal of Applied Physics, Vol. 121, No. 20, 204501, 28.05.2017.

Research output: Research - peer-reviewArticle

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