A method for direct measurement of substrate temperature during copper CMP

Yasa A. Sampurno, Leonard Borucki, Yun Zhuang, Duane Boning, Ara Philipossian

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

A novel method was developed to directly measure the substrate temperature during copper chemical mechanical planarization (CMP). Using specially designed wafer carriers, substrate temperatures were obtained in real-time with an infrared camera. Results indicate that substrate temperatures are higher than pad temperatures. In addition, the substrate temperature distribution appears to be closely related to slurry flow beneath the substrate during polishing. A three-dimensional thermal model was also developed to simulate the pad and wafer temperatures. Simulations support the interpretation of the experimental data.

Original languageEnglish (US)
Pages (from-to)G537-G541
JournalJournal of the Electrochemical Society
Volume152
Issue number7
DOIs
StatePublished - Aug 22 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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