A new modified HF-last cleaning process for high-performance gate dielectrics

S. Verhaverbekc, M. Meuris, M. Schaekers, L. Haspeslagh, P. Mertens, M. M. Heyns, R. De Blank, A. Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We have formulated a new cleaning mixture which consists of HF with minute amounts of IPA added. This solution prevents the panicle addition to the Si surface and does not change the chemical state of the surface significantly. The characteristics of a thin gate oxide grown after this treatment show a markedly improved performance over the standard HF- last or RCA-cleaned samples.

Original languageEnglish (US)
Title of host publication1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22-23
Number of pages2
ISBN (Electronic)0780306988
DOIs
StatePublished - Jan 1 1992
Event1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 - Seattle, United States
Duration: Jun 2 1992Jun 4 1992

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume1992-June
ISSN (Print)0743-1562

Conference

Conference1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
CountryUnited States
CitySeattle
Period6/2/926/4/92

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Verhaverbekc, S., Meuris, M., Schaekers, M., Haspeslagh, L., Mertens, P., Heyns, M. M., De Blank, R., & Philipossian, A. (1992). A new modified HF-last cleaning process for high-performance gate dielectrics. In 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 (pp. 22-23). [200625] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 1992-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.1992.200625