Abstract
Megasonic energy assisted wet cleaning is traditionally used for removal of particulate contaminants from wafer and mask surfaces in semiconductor industry. One of the major issues associated with megasonic cleaning is the damage caused to fragile features due to transient cavitation. Development of a method to monitor transient cavitation events in solutions irradiated with sound energy will allow chemical formulators to fine tune the cleaning chemistry and acoustic field parameters for maximum cleaning efficiency without any feature damage. In this work, a method based on electrochemical impedance spectroscopy (EIS) measurements on a microelectrode has been found to be effective in detection of transient cavity collapses in solutions subjected to ∼1 MHz sound field. Additionally, the technique also provides useful information about the diffusion boundary layer thicknesses in the presence and absence of megasonic field.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 11-15 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 108 |
| DOIs | |
| State | Published - 2013 |
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Keywords
- Acoustic streaming
- Electrochemical impedance spectroscopy (EIS)
- Megasonic cleaning
- Microelectrode
- Transient cavitation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
A novel way of detecting transient cavitation near a solid surface during megasonic cleaning using electrochemical impedance spectroscopy. / Keswani, Manish K; Raghavan, Srini; Deymier, Pierre A.
In: Microelectronic Engineering, Vol. 108, 2013, p. 11-15.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A novel way of detecting transient cavitation near a solid surface during megasonic cleaning using electrochemical impedance spectroscopy
AU - Keswani, Manish K
AU - Raghavan, Srini
AU - Deymier, Pierre A
PY - 2013
Y1 - 2013
N2 - Megasonic energy assisted wet cleaning is traditionally used for removal of particulate contaminants from wafer and mask surfaces in semiconductor industry. One of the major issues associated with megasonic cleaning is the damage caused to fragile features due to transient cavitation. Development of a method to monitor transient cavitation events in solutions irradiated with sound energy will allow chemical formulators to fine tune the cleaning chemistry and acoustic field parameters for maximum cleaning efficiency without any feature damage. In this work, a method based on electrochemical impedance spectroscopy (EIS) measurements on a microelectrode has been found to be effective in detection of transient cavity collapses in solutions subjected to ∼1 MHz sound field. Additionally, the technique also provides useful information about the diffusion boundary layer thicknesses in the presence and absence of megasonic field.
AB - Megasonic energy assisted wet cleaning is traditionally used for removal of particulate contaminants from wafer and mask surfaces in semiconductor industry. One of the major issues associated with megasonic cleaning is the damage caused to fragile features due to transient cavitation. Development of a method to monitor transient cavitation events in solutions irradiated with sound energy will allow chemical formulators to fine tune the cleaning chemistry and acoustic field parameters for maximum cleaning efficiency without any feature damage. In this work, a method based on electrochemical impedance spectroscopy (EIS) measurements on a microelectrode has been found to be effective in detection of transient cavity collapses in solutions subjected to ∼1 MHz sound field. Additionally, the technique also provides useful information about the diffusion boundary layer thicknesses in the presence and absence of megasonic field.
KW - Acoustic streaming
KW - Electrochemical impedance spectroscopy (EIS)
KW - Megasonic cleaning
KW - Microelectrode
KW - Transient cavitation
UR - http://www.scopus.com/inward/record.url?scp=84876212093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876212093&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2013.02.097
DO - 10.1016/j.mee.2013.02.097
M3 - Article
AN - SCOPUS:84876212093
VL - 108
SP - 11
EP - 15
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -