A numerical model to simulate precipitate growth and ripening in oxygen-implanted silicon-on-insulator materials

Research output: Contribution to journalArticle

Abstract

A finite element model was developed to simulate the production of silicon-on-insulator substrates through the technique known as SIMOX. The simulation initiates from an as-implanted distribution of SiO2 precipitates and calculates the time evolution during annealing of the number, size and shape of precipitates, until the eventual formation of the buried oxide layer under a surface-silicon layer. During the evolution, the precipitates can grow, dissolve, merge or split and they can adopt arbitrary shapes under the dynamic interaction of the oxygen concentration annealing and capillary forces. The simulations show that the model reproduces several phenomena observed during the SIMOX process, like Ostwald ripening and the formation of silicon islands.

Original languageEnglish (US)
Article number008
Pages (from-to)1197-1210
Number of pages14
JournalModelling and Simulation in Materials Science and Engineering
Volume14
Issue number7
DOIs
StatePublished - Oct 1 2006

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Silicon-on-insulator
Silicon
Annealing
Oxygen
Precipitates
Numerical models
precipitates
insulators
Ostwald Ripening
SiO2
silicon
oxygen
Finite Element Model
Oxides
Ostwald ripening
Simulation
annealing
Substrate
Calculate
Chemical elements

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Modeling and Simulation

Cite this

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title = "A numerical model to simulate precipitate growth and ripening in oxygen-implanted silicon-on-insulator materials",
abstract = "A finite element model was developed to simulate the production of silicon-on-insulator substrates through the technique known as SIMOX. The simulation initiates from an as-implanted distribution of SiO2 precipitates and calculates the time evolution during annealing of the number, size and shape of precipitates, until the eventual formation of the buried oxide layer under a surface-silicon layer. During the evolution, the precipitates can grow, dissolve, merge or split and they can adopt arbitrary shapes under the dynamic interaction of the oxygen concentration annealing and capillary forces. The simulations show that the model reproduces several phenomena observed during the SIMOX process, like Ostwald ripening and the formation of silicon islands.",
author = "Felicelli, {S. D.} and Supapan Seraphin and Poirier, {David R}",
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AB - A finite element model was developed to simulate the production of silicon-on-insulator substrates through the technique known as SIMOX. The simulation initiates from an as-implanted distribution of SiO2 precipitates and calculates the time evolution during annealing of the number, size and shape of precipitates, until the eventual formation of the buried oxide layer under a surface-silicon layer. During the evolution, the precipitates can grow, dissolve, merge or split and they can adopt arbitrary shapes under the dynamic interaction of the oxygen concentration annealing and capillary forces. The simulations show that the model reproduces several phenomena observed during the SIMOX process, like Ostwald ripening and the formation of silicon islands.

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