A physically transient form of silicon electronics

Suk Won Hwang, Hu Tao, Dae Hyeong Kim, Huanyu Cheng, Jun Kyul Song, Elliott Rill, Mark A. Brenckle, Bruce Panilaitis, Sang Min Won, Yun Soung Kim, Young Min Song, Ki Jun Yu, Abid Ameen Ameen, Rui Li, Yewang Su, Miaomiao Yang, David L. Kaplan, Mitchell R. Zakin, Marvin J Slepian, Yonggang Huang & 2 others Fiorenzo G. Omenetto, John A. Rogers

Research output: Contribution to journalArticle

536 Citations (Scopus)

Abstract

A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.

Original languageEnglish (US)
Pages (from-to)1640-1644
Number of pages5
JournalScience
Volume337
Issue number6102
DOIs
StatePublished - Sep 28 2012

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Silicon
Equipment and Supplies
Electric Power Supplies
Semiconductors
Oxides
Metals
Technology

ASJC Scopus subject areas

  • General

Cite this

Hwang, S. W., Tao, H., Kim, D. H., Cheng, H., Song, J. K., Rill, E., ... Rogers, J. A. (2012). A physically transient form of silicon electronics. Science, 337(6102), 1640-1644. https://doi.org/10.1126/science.1226325

A physically transient form of silicon electronics. / Hwang, Suk Won; Tao, Hu; Kim, Dae Hyeong; Cheng, Huanyu; Song, Jun Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun Soung; Song, Young Min; Yu, Ki Jun; Ameen, Abid Ameen; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

In: Science, Vol. 337, No. 6102, 28.09.2012, p. 1640-1644.

Research output: Contribution to journalArticle

Hwang, SW, Tao, H, Kim, DH, Cheng, H, Song, JK, Rill, E, Brenckle, MA, Panilaitis, B, Won, SM, Kim, YS, Song, YM, Yu, KJ, Ameen, AA, Li, R, Su, Y, Yang, M, Kaplan, DL, Zakin, MR, Slepian, MJ, Huang, Y, Omenetto, FG & Rogers, JA 2012, 'A physically transient form of silicon electronics', Science, vol. 337, no. 6102, pp. 1640-1644. https://doi.org/10.1126/science.1226325
Hwang SW, Tao H, Kim DH, Cheng H, Song JK, Rill E et al. A physically transient form of silicon electronics. Science. 2012 Sep 28;337(6102):1640-1644. https://doi.org/10.1126/science.1226325
Hwang, Suk Won ; Tao, Hu ; Kim, Dae Hyeong ; Cheng, Huanyu ; Song, Jun Kyul ; Rill, Elliott ; Brenckle, Mark A. ; Panilaitis, Bruce ; Won, Sang Min ; Kim, Yun Soung ; Song, Young Min ; Yu, Ki Jun ; Ameen, Abid Ameen ; Li, Rui ; Su, Yewang ; Yang, Miaomiao ; Kaplan, David L. ; Zakin, Mitchell R. ; Slepian, Marvin J ; Huang, Yonggang ; Omenetto, Fiorenzo G. ; Rogers, John A. / A physically transient form of silicon electronics. In: Science. 2012 ; Vol. 337, No. 6102. pp. 1640-1644.
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