A partly phenomenological theory is developed to describe the nonlinear optical properties of laser-excited semiconductors in the spectral vicinity of the fundamental absorption edge under conditions where each optically generated electron-hole pair interacts with the electron-hole plasma. A closed expression for the density- and temperature-dependent absorption spectrum is derived. The resulting equations are evaluated for the example of highly excited GaAs.
ASJC Scopus subject areas
- Condensed Matter Physics