A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors

L. Bányai, Stephan W Koch

Research output: Contribution to journalArticle

190 Citations (Scopus)

Abstract

A partly phenomenological theory is developed to describe the nonlinear optical properties of laser-excited semiconductors in the spectral vicinity of the fundamental absorption edge under conditions where each optically generated electron-hole pair interacts with the electron-hole plasma. A closed expression for the density- and temperature-dependent absorption spectrum is derived. The resulting equations are evaluated for the example of highly excited GaAs.

Original languageEnglish (US)
Pages (from-to)283-291
Number of pages9
JournalZeitschrift für Physik B Condensed Matter
Volume63
Issue number3
DOIs
StatePublished - Sep 1986
Externally publishedYes

Fingerprint

optical spectrum
Screening
screening
Semiconductor materials
Plasmas
Electrons
Absorption spectra
Optical properties
absorption spectra
optical properties
Lasers
lasers
Temperature
temperature
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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