A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors

L. Bányai, S. W. Koch

Research output: Contribution to journalArticle

191 Scopus citations

Abstract

A partly phenomenological theory is developed to describe the nonlinear optical properties of laser-excited semiconductors in the spectral vicinity of the fundamental absorption edge under conditions where each optically generated electron-hole pair interacts with the electron-hole plasma. A closed expression for the density- and temperature-dependent absorption spectrum is derived. The resulting equations are evaluated for the example of highly excited GaAs.

Original languageEnglish (US)
Pages (from-to)283-291
Number of pages9
JournalZeitschrift für Physik B Condensed Matter
Volume63
Issue number3
DOIs
StatePublished - Sep 1 1986

ASJC Scopus subject areas

  • Condensed Matter Physics

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