A sono-electrochemical technique for enhanced particle removal from tantalum surfaces

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5 Citations (Scopus)

Abstract

Low power megasonics is of interest to semiconductor cleaning community due to minimal feature damage. In this work, megasonic field at low power density in conjunction with electrochemistry is used for enhanced removal of silica particles from tantalum wafers. Cleaning studies were conducted in air or argon saturated aqueous solutions at 0.5W/cm2 in the absence and presence of applied potentials of -1.5 V or -2.0 V to tantalum (vs Ag/AgCl). The improvement in particle removal efficiency is attributed to oscillating hydrogen bubbles formed from water reduction in vicinity of tantalum surface and grown to a resonant size under suitable acoustic conditions.

Original languageEnglish (US)
JournalECS Solid State Letters
Volume3
Issue number5
DOIs
StatePublished - 2014

Fingerprint

Tantalum
Cleaning
Argon
Electrochemistry
Silicon Dioxide
Hydrogen
Acoustics
Silica
Semiconductor materials
Water
Air

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

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AB - Low power megasonics is of interest to semiconductor cleaning community due to minimal feature damage. In this work, megasonic field at low power density in conjunction with electrochemistry is used for enhanced removal of silica particles from tantalum wafers. Cleaning studies were conducted in air or argon saturated aqueous solutions at 0.5W/cm2 in the absence and presence of applied potentials of -1.5 V or -2.0 V to tantalum (vs Ag/AgCl). The improvement in particle removal efficiency is attributed to oscillating hydrogen bubbles formed from water reduction in vicinity of tantalum surface and grown to a resonant size under suitable acoustic conditions.

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