A stepwise constant conductance approach for simulating resonant tunneling diodes

Bharat Sukhwani, Meiling Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Pages2518-2521
Number of pages4
DOIs
StatePublished - 2005
EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
Duration: May 23 2005May 26 2005

Other

OtherIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005
CountryJapan
CityKobe
Period5/23/055/26/05

Fingerprint

Resonant tunneling diodes
Nanotechnology
Simulators
Circuit simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sukhwani, B., & Wang, M. (2005). A stepwise constant conductance approach for simulating resonant tunneling diodes. In Proceedings - IEEE International Symposium on Circuits and Systems (pp. 2518-2521). [1465138] https://doi.org/10.1109/ISCAS.2005.1465138

A stepwise constant conductance approach for simulating resonant tunneling diodes. / Sukhwani, Bharat; Wang, Meiling.

Proceedings - IEEE International Symposium on Circuits and Systems. 2005. p. 2518-2521 1465138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sukhwani, B & Wang, M 2005, A stepwise constant conductance approach for simulating resonant tunneling diodes. in Proceedings - IEEE International Symposium on Circuits and Systems., 1465138, pp. 2518-2521, IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005, Kobe, Japan, 5/23/05. https://doi.org/10.1109/ISCAS.2005.1465138
Sukhwani B, Wang M. A stepwise constant conductance approach for simulating resonant tunneling diodes. In Proceedings - IEEE International Symposium on Circuits and Systems. 2005. p. 2518-2521. 1465138 https://doi.org/10.1109/ISCAS.2005.1465138
Sukhwani, Bharat ; Wang, Meiling. / A stepwise constant conductance approach for simulating resonant tunneling diodes. Proceedings - IEEE International Symposium on Circuits and Systems. 2005. pp. 2518-2521
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