A stepwise constant conductance approach for simulating resonant tunneling diodes

Bharat Sukhwani, Janet M. Wang

Research output: Contribution to journalConference article

Abstract

Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

Original languageEnglish (US)
Article number1465138
Pages (from-to)2518-2521
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
DOIs
StatePublished - Dec 1 2005
EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
Duration: May 23 2005May 26 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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