A stepwise constant conductance approach for simulating resonant tunneling diodes

Bharat Sukhwani; Janet M. Wang

doi:10.1109/ISCAS.2005.1465138

A stepwise constant conductance approach for simulating resonant tunneling diodes

Bharat Sukhwani, Janet M. Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

Original language	English (US)
Article number	1465138
Pages (from-to)	2518-2521
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
DOIs	https://doi.org/10.1109/ISCAS.2005.1465138
State	Published - Dec 1 2005
Event	IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: May 23 2005 → May 26 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISCAS.2005.1465138

Cite this

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title = "A stepwise constant conductance approach for simulating resonant tunneling diodes",

abstract = "Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.",

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AU - Wang, Janet M.

PY - 2005/12/1

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N2 - Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

AB - Current CMOS technology is reaching its scaling limits and thus the CMOS based devices are slowly being replaced by new nanotechnology devices. These nanotechnology devices, however, pose some simulation challenges due to their non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance of the simulator. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices, avoiding such problems. The experimental results show a 20-30 times speedup comparing with existing simulators.

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M3 - Conference article

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JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

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T2 - IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005

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ER -

A stepwise constant conductance approach for simulating resonant tunneling diodes

Abstract

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