A study of the growth kinetics of SiO2 in N2O(for MOSFETs)

H. R. Soleimani, A. Philipossian, B. Doyle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations

Abstract

The results of thermal oxidation studies in N2O on P (100) silicon substrates having initial dry oxygen oxide thicknesses of up to 145 A, indicate that the growth characteristics of ultra-thin SiO2 films show no signs of dielectric thickness saturation. For total dielectric thicknesses as large as 160 λ, N2O oxidation rate is generally linear, and significantly smaller than the corresponding rate in dry oxygen. This linear regime has been modeled by a linear rate constant with an activation energy of 1.0 eV. Prior to the linear regime, a short accelerated growth phase has been observed. As the initial oxide thickness on the substrate is increased, the results indicate that the initial accelerated growth characteristics become less and less pronounced. An empirical model, based on the gradual accumulation of rate retarding nitrogen species at the Si/SiO2 interface, has been developed and added to a modified accelerated growth rate model, to successfully simulate this phase. The results are consistent with AES data which show that the higher the initial oxide thickness on the substrates, the greater the nitrogen peak concentration at the Si/SiO2 interface for a given N2O exposure time.

Original languageEnglish (US)
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages629-632
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - Jan 1 1992
Externally publishedYes
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: Dec 13 1992Dec 16 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period12/13/9212/16/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'A study of the growth kinetics of SiO<sub>2</sub> in N<sub>2</sub>O(for MOSFETs)'. Together they form a unique fingerprint.

  • Cite this

    Soleimani, H. R., Philipossian, A., & Doyle, B. (1992). A study of the growth kinetics of SiO2 in N2O(for MOSFETs). In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 629-632). [307439] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307439