A study of the interaction of gallium arsenide with wet chemical formulations using thermodynamic calculations and spectroscopic ellipsometry

J. Price, J. Barnett, Srini Raghavan, Manish K Keswani, R. Govindarajan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper investigates the effectiveness of different wet chemical treatments and their ability to produce/regrow a thin, stable surface oxide layer on GaAs. Results from thermodynamic considerations indicate that a stable surface oxide layer, free of excess arsenic and arsenic oxides, can be achieved by properly choosing aqueous solutions targeted within the GaAs solubility range (pH < 3 or pH > 11) followed by deionized (DI) water rinsing. This is further corroborated by spectroscopic ellipsometric data that can qualitatively, but correctly, identify the thickness of the surface oxide layer after different wet chemical treatments. Specifically, samples treated with acidic solutions based on HCl, HF, and H3PO4 and diluted ammonium hydroxide solution produce a more stable surface layer that is thinner than the native oxide layer on GaAs. The results and subsequent discussion are presented in the context of an attempt at achieving a well passivated GaAs surface, free of excessive surface state defects responsible for Fermi-level pinning.

Original languageEnglish (US)
Pages (from-to)1661-1664
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number9
DOIs
StatePublished - Nov 2010

Fingerprint

Spectroscopic ellipsometry
Gallium arsenide
Oxides
ellipsometry
gallium
Thermodynamics
formulations
thermodynamics
oxides
Arsenic
arsenic
interactions
Ammonium Hydroxide
Ammonium hydroxide
Deionized water
Surface states
Fermi level
hydroxides
surface layers
solubility

Keywords

  • GaAs
  • Pourbaix diagram
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

A study of the interaction of gallium arsenide with wet chemical formulations using thermodynamic calculations and spectroscopic ellipsometry. / Price, J.; Barnett, J.; Raghavan, Srini; Keswani, Manish K; Govindarajan, R.

In: Microelectronic Engineering, Vol. 87, No. 9, 11.2010, p. 1661-1664.

Research output: Contribution to journalArticle

@article{80d9907bf0b84413b7bb00426210cfd8,
title = "A study of the interaction of gallium arsenide with wet chemical formulations using thermodynamic calculations and spectroscopic ellipsometry",
abstract = "This paper investigates the effectiveness of different wet chemical treatments and their ability to produce/regrow a thin, stable surface oxide layer on GaAs. Results from thermodynamic considerations indicate that a stable surface oxide layer, free of excess arsenic and arsenic oxides, can be achieved by properly choosing aqueous solutions targeted within the GaAs solubility range (pH < 3 or pH > 11) followed by deionized (DI) water rinsing. This is further corroborated by spectroscopic ellipsometric data that can qualitatively, but correctly, identify the thickness of the surface oxide layer after different wet chemical treatments. Specifically, samples treated with acidic solutions based on HCl, HF, and H3PO4 and diluted ammonium hydroxide solution produce a more stable surface layer that is thinner than the native oxide layer on GaAs. The results and subsequent discussion are presented in the context of an attempt at achieving a well passivated GaAs surface, free of excessive surface state defects responsible for Fermi-level pinning.",
keywords = "GaAs, Pourbaix diagram, Spectroscopic ellipsometry",
author = "J. Price and J. Barnett and Srini Raghavan and Keswani, {Manish K} and R. Govindarajan",
year = "2010",
month = "11",
doi = "10.1016/j.mee.2009.11.046",
language = "English (US)",
volume = "87",
pages = "1661--1664",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "9",

}

TY - JOUR

T1 - A study of the interaction of gallium arsenide with wet chemical formulations using thermodynamic calculations and spectroscopic ellipsometry

AU - Price, J.

AU - Barnett, J.

AU - Raghavan, Srini

AU - Keswani, Manish K

AU - Govindarajan, R.

PY - 2010/11

Y1 - 2010/11

N2 - This paper investigates the effectiveness of different wet chemical treatments and their ability to produce/regrow a thin, stable surface oxide layer on GaAs. Results from thermodynamic considerations indicate that a stable surface oxide layer, free of excess arsenic and arsenic oxides, can be achieved by properly choosing aqueous solutions targeted within the GaAs solubility range (pH < 3 or pH > 11) followed by deionized (DI) water rinsing. This is further corroborated by spectroscopic ellipsometric data that can qualitatively, but correctly, identify the thickness of the surface oxide layer after different wet chemical treatments. Specifically, samples treated with acidic solutions based on HCl, HF, and H3PO4 and diluted ammonium hydroxide solution produce a more stable surface layer that is thinner than the native oxide layer on GaAs. The results and subsequent discussion are presented in the context of an attempt at achieving a well passivated GaAs surface, free of excessive surface state defects responsible for Fermi-level pinning.

AB - This paper investigates the effectiveness of different wet chemical treatments and their ability to produce/regrow a thin, stable surface oxide layer on GaAs. Results from thermodynamic considerations indicate that a stable surface oxide layer, free of excess arsenic and arsenic oxides, can be achieved by properly choosing aqueous solutions targeted within the GaAs solubility range (pH < 3 or pH > 11) followed by deionized (DI) water rinsing. This is further corroborated by spectroscopic ellipsometric data that can qualitatively, but correctly, identify the thickness of the surface oxide layer after different wet chemical treatments. Specifically, samples treated with acidic solutions based on HCl, HF, and H3PO4 and diluted ammonium hydroxide solution produce a more stable surface layer that is thinner than the native oxide layer on GaAs. The results and subsequent discussion are presented in the context of an attempt at achieving a well passivated GaAs surface, free of excessive surface state defects responsible for Fermi-level pinning.

KW - GaAs

KW - Pourbaix diagram

KW - Spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=77955228666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955228666&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2009.11.046

DO - 10.1016/j.mee.2009.11.046

M3 - Article

AN - SCOPUS:77955228666

VL - 87

SP - 1661

EP - 1664

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 9

ER -