A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys

M. Shamsuzzoha, L. M. Hogan, David J. Smith, Pierre A Deymier

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.

Original languageEnglish (US)
Pages (from-to)635-643
Number of pages9
JournalJournal of Crystal Growth
Volume112
Issue number4
DOIs
StatePublished - 1991

Fingerprint

Silicon
eutectics
Eutectics
Electron microscopes
electron microscopes
high resolution
silicon
flakes
eutectic alloys
nuclei
Crystallography
High resolution electron microscopy
Stacking faults
Image resolution
Crystallization
Crystal growth
crystal defects
crystallography
crystal growth
electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys. / Shamsuzzoha, M.; Hogan, L. M.; Smith, David J.; Deymier, Pierre A.

In: Journal of Crystal Growth, Vol. 112, No. 4, 1991, p. 635-643.

Research output: Contribution to journalArticle

@article{43ce52a354cb4376a6ae2315f4fd4fa7,
title = "A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys",
abstract = "The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.",
author = "M. Shamsuzzoha and Hogan, {L. M.} and Smith, {David J.} and Deymier, {Pierre A}",
year = "1991",
doi = "10.1016/0022-0248(91)90119-P",
language = "English (US)",
volume = "112",
pages = "635--643",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - A transmission and high-resolution electron microscope study of cozonally twinned growth of eutectic silicon in unmodified Al-Si alloys

AU - Shamsuzzoha, M.

AU - Hogan, L. M.

AU - Smith, David J.

AU - Deymier, Pierre A

PY - 1991

Y1 - 1991

N2 - The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.

AB - The crystallography of the silicon phase in unmodified Al-Si eutectic alloys has been studied by conventional and high-resolution electron microscopy. Examination of the flake morphology eutectic silicon, at two mutually perpendicular 〈110〉 zone axes, revealed internal twin traces at only one 〈110〉 zone axis, parallel to the flake surface. Internal twins in the silicon phase appear to develop as a result of purely two-dimensional crystal growth on pre-existing silicon nuclei containing a group of parallel twins. The twins grow along coplanar 〈112〉 directions by the twin plane re-entrant edge (TPRE) mechanism. Stacking faults and twins present in the high-resolution images of eutectic silicon are consistent with TPRE growth originating at the silicon nuclei containing parallel twins.

UR - http://www.scopus.com/inward/record.url?scp=0026190598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026190598&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)90119-P

DO - 10.1016/0022-0248(91)90119-P

M3 - Article

AN - SCOPUS:0026190598

VL - 112

SP - 635

EP - 643

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 4

ER -