Ab-initio calculation of band alignments for opto-electronic simulations

Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz, Stephan W Koch

Research output: Contribution to journalArticle

Abstract

A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.

Original languageEnglish (US)
Article number055328
JournalAIP Advances
Volume9
Issue number5
DOIs
StatePublished - May 1 2019
Externally publishedYes

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alignment
semiconductor junctions
electronics
simulation
quantum wells
valence
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ab-initio calculation of band alignments for opto-electronic simulations. / Oelerich, Jan Oliver; Weseloh, Maria J.; Volz, Kerstin; Koch, Stephan W.

In: AIP Advances, Vol. 9, No. 5, 055328, 01.05.2019.

Research output: Contribution to journalArticle

Oelerich, Jan Oliver ; Weseloh, Maria J. ; Volz, Kerstin ; Koch, Stephan W. / Ab-initio calculation of band alignments for opto-electronic simulations. In: AIP Advances. 2019 ; Vol. 9, No. 5.
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