AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

Kaizad R. Mistry; Brian S. Doyle; Ara Philipossian; Daniel B. Jackson

doi:10.1109/IEDM.1991.235320

AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

Kaizad R. Mistry, Brian S. Doyle, Ara Philipossian, Daniel B. Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

A recently developed model for AC hot carrier degradation is extended to low-Temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	727-730
Number of pages	4
Volume	1991-January
ISBN (Print)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235320
State	Published - 1991
Externally published	Yes
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: Dec 8 1991 → Dec 11 1991

Other

Other	International Electron Devices Meeting, IEDM 1991
Country	United States
City	Washington
Period	12/8/91 → 12/11/91

Keywords

Circuits
Degradation
Dielectrics
Electron traps
Hot carriers
Interface states
Low voltage
Medium voltage
Semiconductor device modeling
Stress

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's. / Mistry, Kaizad R.; Doyle, Brian S.; Philipossian, Ara; Jackson, Daniel B.

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. p. 727-730 235320.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mistry, KR, Doyle, BS, Philipossian, A & Jackson, DB 1991, AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's. in Technical Digest - International Electron Devices Meeting, IEDM. vol. 1991-January, 235320, Institute of Electrical and Electronics Engineers Inc., pp. 727-730, International Electron Devices Meeting, IEDM 1991, Washington, United States, 12/8/91. https://doi.org/10.1109/IEDM.1991.235320

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title = "AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's",

abstract = "A recently developed model for AC hot carrier degradation is extended to low-Temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.",

keywords = "Circuits, Degradation, Dielectrics, Electron traps, Hot carriers, Interface states, Low voltage, Medium voltage, Semiconductor device modeling, Stress",

author = "Mistry, {Kaizad R.} and Doyle, {Brian S.} and Ara Philipossian and Jackson, {Daniel B.}",

year = "1991",

doi = "10.1109/IEDM.1991.235320",

language = "English (US)",

isbn = "0780302435",

volume = "1991-January",

pages = "727--730",

booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",

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TY - GEN

T1 - AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

AU - Mistry, Kaizad R.

AU - Doyle, Brian S.

AU - Philipossian, Ara

AU - Jackson, Daniel B.

PY - 1991

Y1 - 1991

N2 - A recently developed model for AC hot carrier degradation is extended to low-Temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.

AB - A recently developed model for AC hot carrier degradation is extended to low-Temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.

KW - Circuits

KW - Degradation

KW - Dielectrics

KW - Electron traps

KW - Hot carriers

KW - Interface states

KW - Low voltage

KW - Medium voltage

KW - Semiconductor device modeling

KW - Stress

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U2 - 10.1109/IEDM.1991.235320

DO - 10.1109/IEDM.1991.235320

M3 - Conference contribution

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SN - 0780302435

VL - 1991-January

SP - 727

EP - 730

BT - Technical Digest - International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Electron Devices Meeting, IEDM 1991

Y2 - 8 December 1991 through 11 December 1991

ER -

AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

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Keywords

ASJC Scopus subject areas

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