AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

Kaizad R. Mistry, Brian S. Doyle, Ara Philipossian, Daniel B. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

A recently developed model for AC hot carrier degradation is extended to low-Temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages727-730
Number of pages4
Volume1991-January
ISBN (Print)0780302435
DOIs
StatePublished - 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period12/8/9112/11/91

Keywords

  • Circuits
  • Degradation
  • Dielectrics
  • Electron traps
  • Hot carriers
  • Interface states
  • Low voltage
  • Medium voltage
  • Semiconductor device modeling
  • Stress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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