Advanced Si-surface preparation techniques for improved gate oxide integrity

Marc M. Heyns, Marc Meuris, Steven Verhaverbeke, Paul W. Mertens, Ara Philipossian, Dieter Graf, Anton Schnegg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Gate oxide breakdown is one of the major yield and reliability concerns in MOS technology. In this paper the influence of modified RCA pre-oxidation cleanings on the gate oxide integrity is investigated. The effect of the Si-surface roughening generated during the SCl-clean on the oxide characteristics is illustrated. Selective contamination experiments are used to investigate the effect of small amounts of contamination on the oxide breakdown. Finally, HF-last processes are investigated and some novel HF-processes are proposed.

Original languageEnglish (US)
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages187-189
Number of pages3
StatePublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

Fingerprint

Oxides
Contamination
Cleaning
Oxidation
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Heyns, M. M., Meuris, M., Verhaverbeke, S., Mertens, P. W., Philipossian, A., Graf, D., & Schnegg, A. (1992). Advanced Si-surface preparation techniques for improved gate oxide integrity. In Conference on Solid State Devices and Materials (pp. 187-189). Publ by Business Cent for Acad Soc Japan.

Advanced Si-surface preparation techniques for improved gate oxide integrity. / Heyns, Marc M.; Meuris, Marc; Verhaverbeke, Steven; Mertens, Paul W.; Philipossian, Ara; Graf, Dieter; Schnegg, Anton.

Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. p. 187-189.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heyns, MM, Meuris, M, Verhaverbeke, S, Mertens, PW, Philipossian, A, Graf, D & Schnegg, A 1992, Advanced Si-surface preparation techniques for improved gate oxide integrity. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 187-189, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 8/26/92.
Heyns MM, Meuris M, Verhaverbeke S, Mertens PW, Philipossian A, Graf D et al. Advanced Si-surface preparation techniques for improved gate oxide integrity. In Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1992. p. 187-189
Heyns, Marc M. ; Meuris, Marc ; Verhaverbeke, Steven ; Mertens, Paul W. ; Philipossian, Ara ; Graf, Dieter ; Schnegg, Anton. / Advanced Si-surface preparation techniques for improved gate oxide integrity. Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. pp. 187-189
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