Advanced Si-surface preparation techniques for improved gate oxide integrity

Marc M. Heyns, Marc Meuris, Steven Verhaverbeke, Paul W. Mertens, Ara Philipossian, Dieter Graf, Anton Schnegg

Research output: Contribution to conferencePaper

6 Scopus citations

Abstract

Gate oxide breakdown is one of the major yield and reliability concerns in MOS technology. In this paper the influence of modified RCA pre-oxidation cleanings on the gate oxide integrity is investigated. The effect of the Si-surface roughening generated during the SCl-clean on the oxide characteristics is illustrated. Selective contamination experiments are used to investigate the effect of small amounts of contamination on the oxide breakdown. Finally, HF-last processes are investigated and some novel HF-processes are proposed.

Original languageEnglish (US)
Pages187-189
Number of pages3
StatePublished - Dec 1 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

ASJC Scopus subject areas

  • Engineering(all)

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    Heyns, M. M., Meuris, M., Verhaverbeke, S., Mertens, P. W., Philipossian, A., Graf, D., & Schnegg, A. (1992). Advanced Si-surface preparation techniques for improved gate oxide integrity. 187-189. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .