We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve μ phase modulation with 2.3 V applied (Vπ × L = 4.6 V mm, or 39°/V mm) in the presence of negligible absorption change using this all-binary modulator.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering