All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

M. F. Krol, T. Ohtsuki, Galina Khitrova, R. K. Boncek, B. P. McGinnis, H. M. Gibbs, Nasser N Peyghambarian

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5×1017 cm-3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.

Original languageEnglish (US)
Pages (from-to)1550-1552
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number13
DOIs
StatePublished - 1993

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modulators
quantum wells
insertion loss
nonlinearity
excitons
pumps
bandwidth

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm. / Krol, M. F.; Ohtsuki, T.; Khitrova, Galina; Boncek, R. K.; McGinnis, B. P.; Gibbs, H. M.; Peyghambarian, Nasser N.

In: Applied Physics Letters, Vol. 62, No. 13, 1993, p. 1550-1552.

Research output: Contribution to journalArticle

Krol, M. F. ; Ohtsuki, T. ; Khitrova, Galina ; Boncek, R. K. ; McGinnis, B. P. ; Gibbs, H. M. ; Peyghambarian, Nasser N. / All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm. In: Applied Physics Letters. 1993 ; Vol. 62, No. 13. pp. 1550-1552.
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AU - McGinnis, B. P.

AU - Gibbs, H. M.

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