All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

M. F. Krol, T. Ohtsuki, G. Khitrova, R. K. Boncek, B. P. McGinnis, H. M. Gibbs, N. Peyghambarian

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Abstract

A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5×1017 cm-3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.

Original languageEnglish (US)
Pages (from-to)1550-1552
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number13
DOIs
StatePublished - Dec 1 1993

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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