Abstract
Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.
| Original language | English (US) |
|---|---|
| Article number | 05EC01 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 5 PART 2 |
| DOIs | |
| State | Published - May 1 2011 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Meled, A., Zhuang, Y., Sampurno, Y. A., Theng, S., Jiao, Y., Borucki, L., & Philipossian, A. (2011). Analysis of a novel slurry injection system in chemical mechanical planarization. Japanese Journal of Applied Physics, 50(5 PART 2), [05EC01]. https://doi.org/10.1143/JJAP.50.05EC01