TY - JOUR
T1 - Analysis of a novel slurry injection system in chemical mechanical planarization
AU - Meled, Anand
AU - Zhuang, Yun
AU - Sampurno, Yasa Adi
AU - Theng, Siannie
AU - Jiao, Yubo
AU - Borucki, Leonard
AU - Philipossian, Ara
PY - 2011/5/1
Y1 - 2011/5/1
N2 - Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.
AB - Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the pad surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the pad-wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard pad center area slurry application method currently used in the IC manufacturing industry.
UR - http://www.scopus.com/inward/record.url?scp=79957457510&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957457510&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.05EC01
DO - 10.1143/JJAP.50.05EC01
M3 - Article
AN - SCOPUS:79957457510
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 5 PART 2
M1 - 05EC01
ER -