Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original languageEnglish (US)
Title of host publication2005 Quantum Electronics and Laser Science Conference (QELS)
Pages1053-1055
Number of pages3
StatePublished - Oct 31 2005
Event2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

NameQuantum Electronics and Laser Science Conference (QELS)
Volume2

Other

Other2005 Quantum Electronics and Laser Science Conference (QELS)
CountryUnited States
CityBaltimore, MD
Period5/22/055/27/05

ASJC Scopus subject areas

  • Engineering(all)

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