Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In 0.23Ga 0.77As/GaN xAs 1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original languageEnglish (US)
Title of host publication2005 Quantum Electronics and Laser Science Conference (QELS)
Pages1053-1055
Number of pages3
StatePublished - Oct 31 2005
Event2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

NameQuantum Electronics and Laser Science Conference (QELS)
Volume2

Other

Other2005 Quantum Electronics and Laser Science Conference (QELS)
CountryUnited States
CityBaltimore, MD
Period5/22/055/27/05

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Schlichenmaier, C., Thränhardt, A., Meier, T., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. In 2005 Quantum Electronics and Laser Science Conference (QELS) (pp. 1053-1055). [JTuC92] (Quantum Electronics and Laser Science Conference (QELS); Vol. 2).