Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
StatePublished - Jan 1 2006
EventConference on Lasers and Electro-Optics, CLEO 2006 - Long Beach, CA, United States
Duration: May 21 2006May 21 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2006
CountryUnited States
CityLong Beach, CA
Period5/21/065/21/06

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Schlichenmaier, C., Thränhardt, A., Meier, T., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2006). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. In Conference on Lasers and Electro-Optics, CLEO 2006 (Optics InfoBase Conference Papers). Optical Society of America.