Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, Stephan W Koch, W. W. Chow, Jorg Hader, Jerome V Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
StatePublished - 2006
EventConference on Lasers and Electro-Optics, CLEO 2006 - Long Beach, CA, United States
Duration: May 21 2006May 21 2006

Other

OtherConference on Lasers and Electro-Optics, CLEO 2006
CountryUnited States
CityLong Beach, CA
Period5/21/065/21/06

Fingerprint

Nitrides
nitrides
Semiconductor lasers
Heterojunctions
lasing
semiconductor lasers
optical properties
Optical properties
Experiments

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Schlichenmaier, C., Thränhardt, A., Meier, T., Grüning, H., Klar, P. J., Heimbrodt, W., ... Moloney, J. V. (2006). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. In Optics InfoBase Conference Papers Optical Society of America.

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. / Schlichenmaier, C.; Thränhardt, A.; Meier, T.; Grüning, H.; Klar, P. J.; Heimbrodt, W.; Koch, Stephan W; Chow, W. W.; Hader, Jorg; Moloney, Jerome V.

Optics InfoBase Conference Papers. Optical Society of America, 2006.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schlichenmaier, C, Thränhardt, A, Meier, T, Grüning, H, Klar, PJ, Heimbrodt, W, Koch, SW, Chow, WW, Hader, J & Moloney, JV 2006, Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. in Optics InfoBase Conference Papers. Optical Society of America, Conference on Lasers and Electro-Optics, CLEO 2006, Long Beach, CA, United States, 5/21/06.
Schlichenmaier C, Thränhardt A, Meier T, Grüning H, Klar PJ, Heimbrodt W et al. Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. In Optics InfoBase Conference Papers. Optical Society of America. 2006
Schlichenmaier, C. ; Thränhardt, A. ; Meier, T. ; Grüning, H. ; Klar, P. J. ; Heimbrodt, W. ; Koch, Stephan W ; Chow, W. W. ; Hader, Jorg ; Moloney, Jerome V. / Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. Optics InfoBase Conference Papers. Optical Society of America, 2006.
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abstract = "Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0:23Ga0:77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.",
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AU - Klar, P. J.

AU - Heimbrodt, W.

AU - Koch, Stephan W

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AU - Moloney, Jerome V

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