Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, Stephan W Koch, W. W. Chow, Jorg Hader, Jerome V Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
Publication statusPublished - 2005
EventQuantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2005
CountryUnited States
CityBaltimore, MD
Period5/22/055/22/05

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Schlichenmaier, C., Thränhardt, A., Meier, T., Grüning, H., Klar, P. J., Heimbrodt, W., ... Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range. In Optics InfoBase Conference Papers Optical Society of America.