Angle of incidence effects on external quantum efficiency in multicrystalline silicon photovoltaics

Russell J. Beal, Barrett G. Potter, Joseph H. Simmons

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The accurate prediction of photovoltaic power output under a wide range of conditions observed in the field is of significant interest to the effective insertion of solar power into the electric grid. Spectrally resolved external quantum efficiency (EQE) is used to compute changes in the short-circuit current density as a function of the incidence angle, thus providing a cell-level performance metric that can be integrated into an irradiance-to-power model, allowing an alternative to empirically derived parameters. Multicrystalline silicon cells have been examined both in their as-received condition and after the addition of an EVA/top glass laminate structure. The use of a physical mask in the EQE measurement has allowed the isolation of the expected cosine law behavior from the contribution of optical effects associated with reflection and scattering that are unique to cell/module materials and architecture.

Original languageEnglish (US)
Article number6891114
Pages (from-to)1459-1464
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume4
Issue number6
DOIs
StatePublished - Nov 2014

Keywords

  • Angle of incidence (AOI)
  • external quantum efficiency (EQE)
  • irradiance
  • photovoltaic
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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