Angular dependence of anisotropic magnetoresistance in magnetic systems

Steven S.L. Zhang, Shufeng Zhang

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure.

Original languageEnglish (US)
Article number17C703
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
StatePublished - May 7 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Angular dependence of anisotropic magnetoresistance in magnetic systems'. Together they form a unique fingerprint.

Cite this