Angular dependence of anisotropic magnetoresistance in magnetic systems

Steven S L Zhang, Shufeng Zhang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure.

Original languageEnglish (US)
Article number4855935
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
StatePublished - May 7 2014

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orbitals
Ohms law
scattering
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Angular dependence of anisotropic magnetoresistance in magnetic systems. / Zhang, Steven S L; Zhang, Shufeng.

In: Journal of Applied Physics, Vol. 115, No. 17, 4855935, 07.05.2014.

Research output: Contribution to journalArticle

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