Anisotropic magnetoresistance driven by surface spin-orbit scattering

Steven S.L. Zhang, Giovanni Vignale, Shufeng Zhang

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

In a bilayer consisting of an insulator and a ferromagnetic metal (FM), interfacial spin-orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance (AMR). We theoretically investigate the magnetotransport in such bilayer structures by solving the spinor Boltzmann transport equation with the generalized Fuchs-Sondheimer boundary condition that takes into account the effect of spin-orbit scattering at the interface. We find that the new AMR exhibits a peculiar angular dependence which can serve as a genuine experimental signature. We also determine the dependence of the AMR on film thickness as well as resistivity spin asymmetry of the FM.

Original languageEnglish (US)
Article number024412
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number2
DOIs
StatePublished - Jul 13 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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