Anisotropically etched deep gratings for InP/InGaAsP optical devices

Thomas L Koch, P. J. Corvini, W. T. Tsang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

Original languageEnglish (US)
Pages (from-to)3461-3463
Number of pages3
JournalJournal of Applied Physics
Volume62
Issue number8
DOIs
StatePublished - 1987
Externally publishedYes

Fingerprint

etching
gratings
masking
epitaxy
fabrication
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Anisotropically etched deep gratings for InP/InGaAsP optical devices. / Koch, Thomas L; Corvini, P. J.; Tsang, W. T.

In: Journal of Applied Physics, Vol. 62, No. 8, 1987, p. 3461-3463.

Research output: Contribution to journalArticle

Koch, Thomas L ; Corvini, P. J. ; Tsang, W. T. / Anisotropically etched deep gratings for InP/InGaAsP optical devices. In: Journal of Applied Physics. 1987 ; Vol. 62, No. 8. pp. 3461-3463.
@article{f3f0c286f1dc410ea75d4866496c5ef3,
title = "Anisotropically etched deep gratings for InP/InGaAsP optical devices",
abstract = "We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.",
author = "Koch, {Thomas L} and Corvini, {P. J.} and Tsang, {W. T.}",
year = "1987",
doi = "10.1063/1.339319",
language = "English (US)",
volume = "62",
pages = "3461--3463",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Anisotropically etched deep gratings for InP/InGaAsP optical devices

AU - Koch, Thomas L

AU - Corvini, P. J.

AU - Tsang, W. T.

PY - 1987

Y1 - 1987

N2 - We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

AB - We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

UR - http://www.scopus.com/inward/record.url?scp=0343746545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343746545&partnerID=8YFLogxK

U2 - 10.1063/1.339319

DO - 10.1063/1.339319

M3 - Article

AN - SCOPUS:0343746545

VL - 62

SP - 3461

EP - 3463

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -