Anisotropically etched deep gratings for InP/InGaAsP optical devices

T. L. Koch, P. J. Corvini, W. T. Tsang

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We report a new grating fabrication technique for optical devices in the InP/InGaAsP system. Conventional, but very shallow, holographically defined wet etching is used to pattern ultrathin masking layers grown by chemical beam epitaxy. This is followed by selective and anisotropic wet etching, which is shown to yield exceptionally deep, narrow-pitch gratings with reproducible profiles and dimensions.

Original languageEnglish (US)
Pages (from-to)3461-3463
Number of pages3
JournalJournal of Applied Physics
Volume62
Issue number8
DOIs
StatePublished - Dec 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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