The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l09 p/cm2/s (4. 7% at a fluence of 6×l012 p/cm2) is less than that at a proton flux of 1. 45×1010° p/cm2/s (10. 5% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects.
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering