Annealing effects on multi-quantum well laser diodes after proton irradiation

Y. F. Zhao, R. D. Schrimpf, A. R. Patwary, Mark A Neifeld, A. W. Al-Johani, R. A. Weller, K. F. Galloway

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The threshold current of multi-quantum well laser diodes increased by about 1. 5 mA at a proton fluence of 6xl012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias = 35 mA and became about 0. 8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1. 87×l09 p/cm2/s (4. 7% at a fluence of 6×l012 p/cm2) is less than that at a proton flux of 1. 45×1010° p/cm2/s (10. 5% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects.

Original languageEnglish (US)
Pages (from-to)2826-2832
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume45
Issue number6 PART 1
DOIs
StatePublished - 1998

Fingerprint

Proton irradiation
Quantum well lasers
proton irradiation
quantum well lasers
Semiconductor lasers
semiconductor lasers
Annealing
annealing
Protons
fluence
protons
Irradiation
Fluxes
irradiation
Bias currents
threshold currents
recovery
degradation
Recovery
Degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Zhao, Y. F., Schrimpf, R. D., Patwary, A. R., Neifeld, M. A., Al-Johani, A. W., Weller, R. A., & Galloway, K. F. (1998). Annealing effects on multi-quantum well laser diodes after proton irradiation. IEEE Transactions on Nuclear Science, 45(6 PART 1), 2826-2832. https://doi.org/10.1109/23.736535

Annealing effects on multi-quantum well laser diodes after proton irradiation. / Zhao, Y. F.; Schrimpf, R. D.; Patwary, A. R.; Neifeld, Mark A; Al-Johani, A. W.; Weller, R. A.; Galloway, K. F.

In: IEEE Transactions on Nuclear Science, Vol. 45, No. 6 PART 1, 1998, p. 2826-2832.

Research output: Contribution to journalArticle

Zhao, YF, Schrimpf, RD, Patwary, AR, Neifeld, MA, Al-Johani, AW, Weller, RA & Galloway, KF 1998, 'Annealing effects on multi-quantum well laser diodes after proton irradiation', IEEE Transactions on Nuclear Science, vol. 45, no. 6 PART 1, pp. 2826-2832. https://doi.org/10.1109/23.736535
Zhao, Y. F. ; Schrimpf, R. D. ; Patwary, A. R. ; Neifeld, Mark A ; Al-Johani, A. W. ; Weller, R. A. ; Galloway, K. F. / Annealing effects on multi-quantum well laser diodes after proton irradiation. In: IEEE Transactions on Nuclear Science. 1998 ; Vol. 45, No. 6 PART 1. pp. 2826-2832.
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