Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Kh Moumanis, R. P. Seǐsyan, M. É Sasin, A. V. Kavokin, S. I. Kokhanovskiǐ, H. M. Gibbs, Galina Khitrova

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a "Coulomb well" and deformations taken into account.

Original languageEnglish (US)
Pages (from-to)731-733
Number of pages3
JournalPhysics of the Solid State
Volume40
Issue number5
StatePublished - May 1998

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Excitons
Semiconductor quantum wells
Heterojunctions
excitons
quantum wells
attraction
optical spectrum
fine structure
Electrons
electrons
LDS 751
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Moumanis, K., Seǐsyan, R. P., Sasin, M. É., Kavokin, A. V., Kokhanovskiǐ, S. I., Gibbs, H. M., & Khitrova, G. (1998). Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures. Physics of the Solid State, 40(5), 731-733.

Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures. / Moumanis, Kh; Seǐsyan, R. P.; Sasin, M. É; Kavokin, A. V.; Kokhanovskiǐ, S. I.; Gibbs, H. M.; Khitrova, Galina.

In: Physics of the Solid State, Vol. 40, No. 5, 05.1998, p. 731-733.

Research output: Contribution to journalArticle

Moumanis, K, Seǐsyan, RP, Sasin, MÉ, Kavokin, AV, Kokhanovskiǐ, SI, Gibbs, HM & Khitrova, G 1998, 'Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures', Physics of the Solid State, vol. 40, no. 5, pp. 731-733.
Moumanis K, Seǐsyan RP, Sasin MÉ, Kavokin AV, Kokhanovskiǐ SI, Gibbs HM et al. Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures. Physics of the Solid State. 1998 May;40(5):731-733.
Moumanis, Kh ; Seǐsyan, R. P. ; Sasin, M. É ; Kavokin, A. V. ; Kokhanovskiǐ, S. I. ; Gibbs, H. M. ; Khitrova, Galina. / Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures. In: Physics of the Solid State. 1998 ; Vol. 40, No. 5. pp. 731-733.
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