Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Kh Moumanis, R. P. Seǐsyan, M. É Sasin, A. V. Kavokin, S. I. Kokhanovskiǐ, H. M. Gibbs, Galina Khitrova

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Abstract

Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a "Coulomb well" and deformations taken into account.

Original languageEnglish (US)
Pages (from-to)731-733
Number of pages3
JournalPhysics of the Solid State
Volume40
Issue number5
Publication statusPublished - May 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Moumanis, K., Seǐsyan, R. P., Sasin, M. É., Kavokin, A. V., Kokhanovskiǐ, S. I., Gibbs, H. M., & Khitrova, G. (1998). Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures. Physics of the Solid State, 40(5), 731-733.