The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering