Anomalous carrier-induced dispersion in semiconductor quantum dots

H. C. Schneider, W. W. Chow, P. M. Smowton, E. J. Pearce, S. W. Koch

Research output: Contribution to specialist publicationArticle

1 Scopus citations

Abstract

The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.

Original languageEnglish (US)
Number of pages1
Volume13
No12
Specialist publicationOptics and Photonics News
DOIs
StatePublished - Dec 2002

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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