Anomalous carrier-induced dispersion in semiconductor quantum dots

H. C. Schneider, W. W. Chow, P. M. Smowton, E. J. Pearce, Stephan W Koch

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The anomalous carrier-induced dispersion in semiconductor quantum dots was studied. The experiment was performed using quantum-dot lasers consisting of InGaAs quantum dots embedded in GaAs quantum well layers. The experimental result was found to be consistent with a negative linewidth enhancement factor and showed that the anomaly in the dispersive behavior of a quantum dot structure eliminated the longstanding beam-filamentation problem.

Original languageEnglish (US)
Pages (from-to)50
Number of pages1
JournalOptics and Photonics News
Volume13
Issue number12
StatePublished - 2002
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
Quantum dot lasers
Linewidth
Semiconductor quantum wells
quantum wells
anomalies
augmentation
Experiments
lasers
gallium arsenide

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Schneider, H. C., Chow, W. W., Smowton, P. M., Pearce, E. J., & Koch, S. W. (2002). Anomalous carrier-induced dispersion in semiconductor quantum dots. Optics and Photonics News, 13(12), 50.

Anomalous carrier-induced dispersion in semiconductor quantum dots. / Schneider, H. C.; Chow, W. W.; Smowton, P. M.; Pearce, E. J.; Koch, Stephan W.

In: Optics and Photonics News, Vol. 13, No. 12, 2002, p. 50.

Research output: Contribution to journalArticle

Schneider, HC, Chow, WW, Smowton, PM, Pearce, EJ & Koch, SW 2002, 'Anomalous carrier-induced dispersion in semiconductor quantum dots', Optics and Photonics News, vol. 13, no. 12, pp. 50.
Schneider, H. C. ; Chow, W. W. ; Smowton, P. M. ; Pearce, E. J. ; Koch, Stephan W. / Anomalous carrier-induced dispersion in semiconductor quantum dots. In: Optics and Photonics News. 2002 ; Vol. 13, No. 12. pp. 50.
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