We report on the development of UV anti-reflection coatings for silicon CCDs, optimized for use in a UV spectrograph. Typical UV detectors have very low quantum efficiency. We report on progress in the development of a CCD detector with theoretical QE of greater than 60% in wavelengths from 100 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a thin film anti-reflection coating. We discuss coatings covering the entire range of interest using sputtered and thermally evaporated MgF, HfO2, SiO2, MgO, and Al2O3. Preliminary testing has shown great promise for this method.