Application of process simulation for comparison of contactless and conventional electrodeposition methods for 3D packaging

M. Zhao, K. Jakes, K. Luke, J. Kishore, R. Gouk, S. Verhaverbeke, F. Shadman, M. Keswani

Research output: Research - peer-reviewArticle

Abstract

The objective of this study is to simulate the through silicon via copper filling process in conventional and recently developed contactless methods of electrodeposition for 3D packaging applications. Electrochemical measurements were employed and integrated in the development of a comprehensive process simulator. The experimental data not only provided the necessary parameters for the model but also validated the simulation accuracy. From the simulation results, the "pinch-off" effect was observed for the conventional deposition process; this effect causes partial filling and void formation. By contrast, a void-free filling with higher deposition rates was achieved by the use of the contactless technique. Further, experimental results of contactless electrodeposition on patterned wafers showed bottom-up filling in vias of 4 μm diameter and 50 μm depth without void formation and no copper overburden in the regions outside the vias.

LanguageEnglish (US)
PagesP483-P488
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number9
DOIs
StatePublished - 2016

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Electrodeposition
Packaging
Copper
Silicon
Deposition rates
Simulators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Application of process simulation for comparison of contactless and conventional electrodeposition methods for 3D packaging. / Zhao, M.; Jakes, K.; Luke, K.; Kishore, J.; Gouk, R.; Verhaverbeke, S.; Shadman, F.; Keswani, M.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 9, 2016, p. P483-P488.

Research output: Research - peer-reviewArticle

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