Application of the stribeck+ curve in silicon dioxide chemical mechanical planarization

Ruochen Han, Yasa Sampurno, Siannie Theng, Fransisca Sudargho, Yun Zhuang, Ara Philipossian

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The Stribeck+ curve was successfully applied to silicon dioxide chemical mechanical planarization processes to characterize the tribology of such processes under different process conditions and consumables. Results showed that the Stribeck+ curve was capable of rapidly determining and differentiating the tribological mechanism among all cases studied in this manuscript. The Stribeck+ curve could indicate process stability as shown by the spread of the COF vertical clusters. The Stribeck+ curve also confirmed a previously known effect that the greater the ratio of pad’s up-features to the total pad area, the greater the probability of wafer hydroplaning. This work underscore the importance of a new method for determining an “improved” Stribeck curve (referred as the “Stribeck+ curve”) while dramatically reducing the amount of consumables and time required to obtain the curve through traditional means.

Original languageEnglish (US)
Pages (from-to)P161-P164
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number4
DOIs
StatePublished - Jan 1 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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