Applications of germanium to low temperature micro-machining

Biao Li, Bin Xiong, Linan Jiang, Yitshak Zohar, Man Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350 °C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
Editors Anon
PublisherIEEE
Pages638-643
Number of pages6
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS - Orlando, FL, USA
Duration: Jan 17 1999Jan 21 1999

Other

OtherProceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS
CityOrlando, FL, USA
Period1/17/991/21/99

Fingerprint

Germanium
Machining
Silicon
Temperature
Microfabrication
MEMS
Physical properties
Sensors
Liquids
Processing
Gases

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

Li, B., Xiong, B., Jiang, L., Zohar, Y., & Wong, M. (1999). Applications of germanium to low temperature micro-machining. In Anon (Ed.), Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (pp. 638-643). IEEE.

Applications of germanium to low temperature micro-machining. / Li, Biao; Xiong, Bin; Jiang, Linan; Zohar, Yitshak; Wong, Man.

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). ed. / Anon. IEEE, 1999. p. 638-643.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, B, Xiong, B, Jiang, L, Zohar, Y & Wong, M 1999, Applications of germanium to low temperature micro-machining. in Anon (ed.), Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). IEEE, pp. 638-643, Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS, Orlando, FL, USA, 1/17/99.
Li B, Xiong B, Jiang L, Zohar Y, Wong M. Applications of germanium to low temperature micro-machining. In Anon, editor, Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). IEEE. 1999. p. 638-643
Li, Biao ; Xiong, Bin ; Jiang, Linan ; Zohar, Yitshak ; Wong, Man. / Applications of germanium to low temperature micro-machining. Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). editor / Anon. IEEE, 1999. pp. 638-643
@inproceedings{9743800340164deea7f880dd0b4992b4,
title = "Applications of germanium to low temperature micro-machining",
abstract = "Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350 °C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.",
author = "Biao Li and Bin Xiong and Linan Jiang and Yitshak Zohar and Man Wong",
year = "1999",
language = "English (US)",
pages = "638--643",
editor = "Anon",
booktitle = "Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)",
publisher = "IEEE",

}

TY - GEN

T1 - Applications of germanium to low temperature micro-machining

AU - Li, Biao

AU - Xiong, Bin

AU - Jiang, Linan

AU - Zohar, Yitshak

AU - Wong, Man

PY - 1999

Y1 - 1999

N2 - Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350 °C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.

AB - Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350 °C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.

UR - http://www.scopus.com/inward/record.url?scp=0032639820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032639820&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032639820

SP - 638

EP - 643

BT - Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

A2 - Anon, null

PB - IEEE

ER -