Asperity size distribution near wafer features during CMP

Caprice Gray, Chris Rogers, Vincent Manno, James Vlahakis, Chris Barns, Masour Moinpour, Sriram Anjur, Ara Philipossian, Len Borucki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dual Emission Laser Induced Fluorescence (DELIF) is used to attain in-situ images of the slurry layer between the polishing pad and wafer during chemical mechanical planarization (CMP). The slurry layer under a flat wafer takes the shape of the polishing pad. As a wafer feature passes over the pad, the pad adapts to the wafer shape and expands into the well. Here, we present a comparison of the shape of the polishing pad inside and outside 14 urn deep wafer wells. By comparing asperity size distribution histograms we see no asperity compression inside the wells. However, in the region outside the wells where the pad and the wafer are in contact, asperities are compressed approximately 2.5um with an applied pressure to the wafer of 6.0 psi. In addition to asperity compression we observe an increase in pad-wafer contact from the 0.5 psi to the 6.0 psi case.

Original languageEnglish (US)
Title of host publication2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006
Pages593-596
Number of pages4
StatePublished - 2006
Event11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006 - Fremont, CA, United States
Duration: Feb 21 2006Feb 23 2006

Other

Other11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006
CountryUnited States
CityFremont, CA
Period2/21/062/23/06

Fingerprint

Chemical mechanical polishing
Polishing
Fluorescence
Lasers

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Gray, C., Rogers, C., Manno, V., Vlahakis, J., Barns, C., Moinpour, M., ... Borucki, L. (2006). Asperity size distribution near wafer features during CMP. In 2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006 (pp. 593-596)

Asperity size distribution near wafer features during CMP. / Gray, Caprice; Rogers, Chris; Manno, Vincent; Vlahakis, James; Barns, Chris; Moinpour, Masour; Anjur, Sriram; Philipossian, Ara; Borucki, Len.

2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006. 2006. p. 593-596.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gray, C, Rogers, C, Manno, V, Vlahakis, J, Barns, C, Moinpour, M, Anjur, S, Philipossian, A & Borucki, L 2006, Asperity size distribution near wafer features during CMP. in 2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006. pp. 593-596, 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006, Fremont, CA, United States, 2/21/06.
Gray C, Rogers C, Manno V, Vlahakis J, Barns C, Moinpour M et al. Asperity size distribution near wafer features during CMP. In 2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006. 2006. p. 593-596
Gray, Caprice ; Rogers, Chris ; Manno, Vincent ; Vlahakis, James ; Barns, Chris ; Moinpour, Masour ; Anjur, Sriram ; Philipossian, Ara ; Borucki, Len. / Asperity size distribution near wafer features during CMP. 2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006. 2006. pp. 593-596
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AU - Vlahakis, James

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AU - Anjur, Sriram

AU - Philipossian, Ara

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