Atomic layer deposition of silicon nitride barrier layer for self-aligned gate stack

Casey C. Finstad, Anthony J. Muscat

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The surface chemical processes needed to optimize subsequent deposition steps and to grow self-aligned structures have been investigated for gate dielectric formation. UV-Cl 2 exposures were used to terminate bare silicon surfaces with chlorine atoms (10% Cl 2 in N 2 at 150°C and 100 Torr for 10 min, 1000 W Xe arc lamp). Exposure to NH 3 and UV-NH 3 chemistries (10% NH 3 in N 2 at 80°C for 10 min) replaced the chlorine atoms with amine (-NH 2) groups, intended as the foundation of a silicon nitride diffusion barrier. By providing a more reactive surface, ALD of silicon nitride occurs at lower temperatures (<100°C) and with better initial deposition rates compared to deposition on hydrogen terminated silicon. Surface activation by UV-Cl 2 is selective for Si over SiO 2, enabling deposition of self-aligned nitride and dielectric films. The amine surface coverage saturates at less than one monolayer and is equilibrium limited. UV illumination increased amine coverage at similar conditions.

Original languageEnglish (US)
Pages86-92
Number of pages7
StatePublished - Dec 1 2003
EventCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

ASJC Scopus subject areas

  • Engineering(all)

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