Atomic layer deposition of tin below 600 k using n2h4

Adam Hinckley, Anthony Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2 with TiCl4 and N2 H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2 because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2 H4. Oxygen and Ti could be removed at 623 K by TiCl4 producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsPaul Mertens, Marc Meuris, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages232-237
Number of pages6
ISBN (Print)9783035714173
DOIs
StatePublished - Jan 1 2018
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: Sep 3 2018Sep 5 2018

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period9/3/189/5/18

Keywords

  • Atomic Layer Deposition
  • Barrier Layer
  • Hydrazine
  • Titanium nitride

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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