Atomic layer deposition of tin below 600 k using n2h4

Adam Hinckley, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2 with TiCl4 and N2 H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2 because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2 H4. Oxygen and Ti could be removed at 623 K by TiCl4 producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsMarc Heyns, Marc Meuris, Marc Meuris, Paul Mertens
PublisherTrans Tech Publications Ltd
Pages232-237
Number of pages6
ISBN (Print)9783035714173
DOIs
StatePublished - Jan 1 2018
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: Sep 3 2018Sep 5 2018

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period9/3/189/5/18

Fingerprint

Titanium nitride
Tin
Atomic layer deposition
titanium nitrides
atomic layer epitaxy
tin
Hydrogen
Ellipsometry
Surface reactions
Film growth
surface reactions
ellipsometry
X ray photoelectron spectroscopy
photoelectron spectroscopy
Oxygen
oxygen
hydrogen
x rays
Temperature
temperature

Keywords

  • Atomic Layer Deposition
  • Barrier Layer
  • Hydrazine
  • Titanium nitride

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hinckley, A., & Muscat, A. J. (2018). Atomic layer deposition of tin below 600 k using n2h4 In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 232-237). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.232

Atomic layer deposition of tin below 600 k using n2h4 . / Hinckley, Adam; Muscat, Anthony J.

Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Marc Heyns; Marc Meuris; Marc Meuris; Paul Mertens. Trans Tech Publications Ltd, 2018. p. 232-237 (Solid State Phenomena; Vol. 282 SSP).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hinckley, A & Muscat, AJ 2018, Atomic layer deposition of tin below 600 k using n2h4 in M Heyns, M Meuris, M Meuris & P Mertens (eds), Ultra Clean Processing of Semiconductor Surfaces XIV. Solid State Phenomena, vol. 282 SSP, Trans Tech Publications Ltd, pp. 232-237, 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018, Leuven, Belgium, 9/3/18. https://doi.org/10.4028/www.scientific.net/SSP.282.232
Hinckley A, Muscat AJ. Atomic layer deposition of tin below 600 k using n2h4 In Heyns M, Meuris M, Meuris M, Mertens P, editors, Ultra Clean Processing of Semiconductor Surfaces XIV. Trans Tech Publications Ltd. 2018. p. 232-237. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.282.232
Hinckley, Adam ; Muscat, Anthony J. / Atomic layer deposition of tin below 600 k using n2h4 Ultra Clean Processing of Semiconductor Surfaces XIV. editor / Marc Heyns ; Marc Meuris ; Marc Meuris ; Paul Mertens. Trans Tech Publications Ltd, 2018. pp. 232-237 (Solid State Phenomena).
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