Auger losses in GaN-based quantum wells: Microscopic theory

B. Pasenow, S. W. Koch, J. Hader, J. V. Moloney, M. Sabathil, N. Linder, S. Lutgen

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

Original languageEnglish (US)
Pages (from-to)S864-S868
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue numberSUPPL. 2
DOIs
StatePublished - Jul 1 2009

ASJC Scopus subject areas

  • Condensed Matter Physics

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