Auger losses in GaN-based quantum wells: Microscopic theory

B. Pasenow; S. W. Koch; J. Hader; J. V. Moloney; M. Sabathil; N. Linder; S. Lutgen

doi:10.1002/pssc.200880865

Auger losses in GaN-based quantum wells: Microscopic theory

B. Pasenow, S. W. Koch, J. Hader, J. V. Moloney, M. Sabathil, N. Linder, S. Lutgen

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

Original language	English (US)
Pages (from-to)	S864-S868
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1002/pssc.200880865
State	Published - Jul 1 2009

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200880865

Fingerprint Dive into the research topics of 'Auger losses in GaN-based quantum wells: Microscopic theory'. Together they form a unique fingerprint.

Cite this

@article{6a8cbd3769144164935b7951ad1bd4bb,

title = "Auger losses in GaN-based quantum wells: Microscopic theory",

abstract = "Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.",

author = "B. Pasenow and Koch, {S. W.} and J. Hader and Moloney, {J. V.} and M. Sabathil and N. Linder and S. Lutgen",

year = "2009",

month = jul,

day = "1",

doi = "10.1002/pssc.200880865",

language = "English (US)",

volume = "6",

pages = "S864--S868",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "SUPPL. 2",

}

TY - JOUR

T1 - Auger losses in GaN-based quantum wells

T2 - Microscopic theory

AU - Pasenow, B.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Sabathil, M.

AU - Linder, N.

AU - Lutgen, S.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

AB - Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

UR - http://www.scopus.com/inward/record.url?scp=73349120030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73349120030&partnerID=8YFLogxK

U2 - 10.1002/pssc.200880865

DO - 10.1002/pssc.200880865

M3 - Article

AN - SCOPUS:73349120030

VL - 6

SP - S864-S868

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - SUPPL. 2

ER -

Auger losses in GaN-based quantum wells: Microscopic theory

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this