Abstract
Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.
| Original language | English (US) |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 6 |
| Issue number | SUPPL. 2 |
| DOIs | |
| State | Published - Jul 2009 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Auger losses in GaN-based quantum wells : Microscopic theory. / Pasenow, B.; Koch, Stephan W; Hader, Jorg; Moloney, Jerome V; Sabathil, M.; Linder, N.; Lutgen, S.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. SUPPL. 2, 07.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Auger losses in GaN-based quantum wells
T2 - Microscopic theory
AU - Pasenow, B.
AU - Koch, Stephan W
AU - Hader, Jorg
AU - Moloney, Jerome V
AU - Sabathil, M.
AU - Linder, N.
AU - Lutgen, S.
PY - 2009/7
Y1 - 2009/7
N2 - Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.
AB - Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.
UR - http://www.scopus.com/inward/record.url?scp=73349120030&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=73349120030&partnerID=8YFLogxK
U2 - 10.1002/pssc.200880865
DO - 10.1002/pssc.200880865
M3 - Article
AN - SCOPUS:73349120030
VL - 6
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - SUPPL. 2
ER -