Auger losses in GaN-based quantum wells: Microscopic theory

B. Pasenow; S. W. Koch; J. Hader; J. V. Moloney; M. Sabathil; N. Linder; S. Lutgen

doi:10.1002/pssc.200880865

Auger losses in GaN-based quantum wells: Microscopic theory

B. Pasenow, S. W. Koch, J. Hader, J. V. Moloney, M. Sabathil, N. Linder, S. Lutgen

Optical Sciences, College of

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19 Scopus citations

Abstract

Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

Original language	English (US)
Pages (from-to)	S864-S868
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1002/pssc.200880865
State	Published - Jul 1 2009

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200880865

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AU - Pasenow, B.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Sabathil, M.

AU - Linder, N.

AU - Lutgen, S.

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N2 - Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

AB - Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto-band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells.

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Auger losses in GaN-based quantum wells: Microscopic theory

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